Abstract
Plasma Immersion Ion Implantation (PIII) is a cluster compatible tool offering many inherent advantages over conventional beamline ion implantation. This novel technique has found interesting applications in the formation of shallow junction, synthesis of silicon-on-insulator, large area implantation, trench doping, etc. This article describes some of the recent developments of PIII pertaining to semiconductor materials and processing.
| Original language | English |
|---|---|
| Pages (from-to) | 165-172 |
| Journal | Semiconductor International |
| Volume | 19 |
| Issue number | 6 |
| Publication status | Published - Jun 1996 |
Bibliographical note
Full text of this publication does not contain sufficient affiliation information. With consent from the author(s) concerned, the Research Unit(s) information for this record is based on the existing academic department affiliation of the author(s).Research Keywords
- Flat panel displays
- Ion implantation
- SOI structures
Fingerprint
Dive into the research topics of 'Recent Applications of Plasma Immersion Ion Implantation'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver