Real time spectroscopic ellipsometry of thin film CdTe deposition by magnetron sputtering for photovoltaic applications

J. A. Zapien; Jie Chen; Jian Li; J. Inks; N. J. Podraza; Chi Chen; J. Drayton; A. Vasko; A. Gupta; S. L. Wang; R. W. Collins; A. D. Compaan

doi:10.1109/PVSC.2005.1488169

Real time spectroscopic ellipsometry of thin film CdTe deposition by magnetron sputtering for photovoltaic applications

J. A. Zapien
, Jie Chen
, Jian Li
, J. Inks
, N. J. Podraza
, Chi Chen
, J. Drayton
, A. Vasko
, A. Gupta
, S. L. Wang
, R. W. Collins
, A. D. Compaan

City University of Hong Kong

Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal

4 Citations (Scopus)

Abstract

Real time spectroscopic ellipsometry based on rotating-compensator modulation and multichannel detection has been implemented to characterize CdTe deposition for polycrystalline thin film photovoltaic applications. The CdTe film measured and analyzed in detail in this study was prepared by magnetron sputtering onto a native oxide-covered crystalline silicon substrate. Key observations from this study include: (i) monolayer-level surface roughness thickness (-3 Å) at the onset of bulk layer formation and during subsequent growth to ∼50 Å; (ii) gradual development of a lower density bulk layer after ∼1300 Å of CdTe thickness; and (iii) much broader above-gap critical points in the dielectric function for thin film polycrystalline CdTe compared to the single crystal. © 2005 IEEE.

Original language	English
Pages (from-to)	461-464
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
DOIs	https://doi.org/10.1109/PVSC.2005.1488169
Publication status	Published - 2005
Event	31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duration: 3 Jan 2005 → 7 Jan 2005

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access Output

10.1109/PVSC.2005.1488169

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

Zapien, J. A., Chen, J., Li, J., Inks, J., Podraza, N. J., Chen, C., Drayton, J., Vasko, A., Gupta, A., Wang, S. L., Collins, R. W., & Compaan, A. D. (2005). Real time spectroscopic ellipsometry of thin film CdTe deposition by magnetron sputtering for photovoltaic applications. Conference Record of the IEEE Photovoltaic Specialists Conference, 461-464. https://doi.org/10.1109/PVSC.2005.1488169

@article{bdaa9c105db744e28d4868fcdd4e8de1,

title = "Real time spectroscopic ellipsometry of thin film CdTe deposition by magnetron sputtering for photovoltaic applications",

abstract = "Real time spectroscopic ellipsometry based on rotating-compensator modulation and multichannel detection has been implemented to characterize CdTe deposition for polycrystalline thin film photovoltaic applications. The CdTe film measured and analyzed in detail in this study was prepared by magnetron sputtering onto a native oxide-covered crystalline silicon substrate. Key observations from this study include: (i) monolayer-level surface roughness thickness (-3 {\AA}) at the onset of bulk layer formation and during subsequent growth to ∼50 {\AA}; (ii) gradual development of a lower density bulk layer after ∼1300 {\AA} of CdTe thickness; and (iii) much broader above-gap critical points in the dielectric function for thin film polycrystalline CdTe compared to the single crystal. {\textcopyright} 2005 IEEE.",

author = "Zapien, \{J. A.\} and Jie Chen and Jian Li and J. Inks and Podraza, \{N. J.\} and Chi Chen and J. Drayton and A. Vasko and A. Gupta and Wang, \{S. L.\} and Collins, \{R. W.\} and Compaan, \{A. D.\}",

year = "2005",

doi = "10.1109/PVSC.2005.1488169",

language = "English",

pages = "461--464",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "IEEE",

note = "31st IEEE Photovoltaic Specialists Conference - 2005 ; Conference date: 03-01-2005 Through 07-01-2005",

}

Zapien, JA, Chen, J, Li, J, Inks, J, Podraza, NJ, Chen, C, Drayton, J, Vasko, A, Gupta, A, Wang, SL, Collins, RW & Compaan, AD 2005, 'Real time spectroscopic ellipsometry of thin film CdTe deposition by magnetron sputtering for photovoltaic applications', Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 461-464. https://doi.org/10.1109/PVSC.2005.1488169

TY - JOUR

T1 - Real time spectroscopic ellipsometry of thin film CdTe deposition by magnetron sputtering for photovoltaic applications

AU - Zapien, J. A.

AU - Chen, Jie

AU - Li, Jian

AU - Inks, J.

AU - Podraza, N. J.

AU - Chen, Chi

AU - Drayton, J.

AU - Vasko, A.

AU - Gupta, A.

AU - Wang, S. L.

AU - Collins, R. W.

AU - Compaan, A. D.

PY - 2005

Y1 - 2005

N2 - Real time spectroscopic ellipsometry based on rotating-compensator modulation and multichannel detection has been implemented to characterize CdTe deposition for polycrystalline thin film photovoltaic applications. The CdTe film measured and analyzed in detail in this study was prepared by magnetron sputtering onto a native oxide-covered crystalline silicon substrate. Key observations from this study include: (i) monolayer-level surface roughness thickness (-3 Å) at the onset of bulk layer formation and during subsequent growth to ∼50 Å; (ii) gradual development of a lower density bulk layer after ∼1300 Å of CdTe thickness; and (iii) much broader above-gap critical points in the dielectric function for thin film polycrystalline CdTe compared to the single crystal. © 2005 IEEE.

AB - Real time spectroscopic ellipsometry based on rotating-compensator modulation and multichannel detection has been implemented to characterize CdTe deposition for polycrystalline thin film photovoltaic applications. The CdTe film measured and analyzed in detail in this study was prepared by magnetron sputtering onto a native oxide-covered crystalline silicon substrate. Key observations from this study include: (i) monolayer-level surface roughness thickness (-3 Å) at the onset of bulk layer formation and during subsequent growth to ∼50 Å; (ii) gradual development of a lower density bulk layer after ∼1300 Å of CdTe thickness; and (iii) much broader above-gap critical points in the dielectric function for thin film polycrystalline CdTe compared to the single crystal. © 2005 IEEE.

UR - https://www.scopus.com/pages/publications/27944486205

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-27944486205&origin=recordpage

U2 - 10.1109/PVSC.2005.1488169

DO - 10.1109/PVSC.2005.1488169

M3 - RGC 22 - Publication in policy or professional journal

SN - 0160-8371

SP - 461

EP - 464

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - 31st IEEE Photovoltaic Specialists Conference - 2005

Y2 - 3 January 2005 through 7 January 2005

ER -

Real time spectroscopic ellipsometry of thin film CdTe deposition by magnetron sputtering for photovoltaic applications

Abstract

UN SDGs

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Cite this