Read Disturb and Reliability: The Complete Story for 3D CT NAND Flash

Tianyu Ren; Qiao Li; Min Ye; Chun Jason Xue

doi:10.1109/NVMSA58981.2023.00024

Read Disturb and Reliability: The Complete Story for 3D CT NAND Flash

Tianyu Ren
, Qiao Li^*
, Min Ye
, Chun Jason Xue

^*Corresponding author for this work

Department of Computer Science

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

9 Citations (Scopus)

Abstract

While providing large capacity through stacking more layers, high-density 3D NAND flash memories suffer from a higher raw bit error rate (RBER). The reliability behaviors of 3D flash become more complex than planar flash, especially for read disturbance. This work studies the reliability behaviors over read operations on high-density 3D charge trap (CT) NAND flash. Through comprehensive experiments on the latest real 3D flash chips, we present the complete story of read disturb and reliability. By performing repeated read operations on a block, the weak charging from pass-Through voltages could compensate for some charge leakage from retention loss. This process could reduce the retention errors of data. However, after a certain amount of read operations, the RBER will increase due to the continuous charging on flash cells. We also present the RBER impacts from read operations under different settings of major error sources, including program/erase (P/E) cycling, retention time, and read location. Based on these observations, we present discussions on read-intensive data allocations, as current flash blocks with more layers would experience much more read operations. © 2023 IEEE.

Original language	English
Title of host publication	Proceedings - 2023 12th IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA 2023
Place of Publication	Los Alamitos, Calif.
Publisher	IEEE
Number of pages	6
ISBN (Electronic)	9798350344967
ISBN (Print)	9798350344974
DOIs	https://doi.org/10.1109/NVMSA58981.2023.00024
Publication status	Published - 2023
Event	12th IEEE Non-Volatile Memory Systems and Applications Symposium (NVMSA 2023) - TOKI MESSE, Niigata, Japan Duration: 30 Aug 2023 → 1 Sept 2023 https://nvmsa2023.github.io/ https://ieeexplore.ieee.org/xpl/conhome/10254385/proceeding

Publication series

Name	Proceedings - IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA
ISSN (Print)	2575-2561
ISSN (Electronic)	2575-257X

Conference

Conference	12th IEEE Non-Volatile Memory Systems and Applications Symposium (NVMSA 2023)
Abbreviated title	IEEE NVMSA 2023
Place	Japan
City	Niigata
Period	30/08/23 → 1/09/23
Internet address	https://nvmsa2023.github.io/ https://ieeexplore.ieee.org/xpl/conhome/10254385/proceeding

Research Keywords

3D Charge Trap Flash Memory
Data Retention
P/E Cycling
Read Operations

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RGC-funded

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10.1109/NVMSA58981.2023.00024

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@inproceedings{7b24e8636e7c40d398fe9be94f72303a,

title = "Read Disturb and Reliability: The Complete Story for 3D CT NAND Flash",

abstract = "While providing large capacity through stacking more layers, high-density 3D NAND flash memories suffer from a higher raw bit error rate (RBER). The reliability behaviors of 3D flash become more complex than planar flash, especially for read disturbance. This work studies the reliability behaviors over read operations on high-density 3D charge trap (CT) NAND flash. Through comprehensive experiments on the latest real 3D flash chips, we present the complete story of read disturb and reliability. By performing repeated read operations on a block, the weak charging from pass-Through voltages could compensate for some charge leakage from retention loss. This process could reduce the retention errors of data. However, after a certain amount of read operations, the RBER will increase due to the continuous charging on flash cells. We also present the RBER impacts from read operations under different settings of major error sources, including program/erase (P/E) cycling, retention time, and read location. Based on these observations, we present discussions on read-intensive data allocations, as current flash blocks with more layers would experience much more read operations. {\textcopyright} 2023 IEEE.",

keywords = "3D Charge Trap Flash Memory, Data Retention, P/E Cycling, Read Operations",

author = "Tianyu Ren and Qiao Li and Min Ye and Xue, \{Chun Jason\}",

year = "2023",

doi = "10.1109/NVMSA58981.2023.00024",

language = "English",

isbn = "9798350344974",

series = "Proceedings - IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA",

publisher = "IEEE",

booktitle = "Proceedings - 2023 12th IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA 2023",

address = "United States",

note = "12th IEEE Non-Volatile Memory Systems and Applications Symposium (NVMSA 2023), IEEE NVMSA 2023 ; Conference date: 30-08-2023 Through 01-09-2023",

url = "https://nvmsa2023.github.io/, https://ieeexplore.ieee.org/xpl/conhome/10254385/proceeding",

}

Ren, T , Li, Q , Ye, M & Xue, CJ 2023, Read Disturb and Reliability: The Complete Story for 3D CT NAND Flash. in Proceedings - 2023 12th IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA 2023. Proceedings - IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA, IEEE, Los Alamitos, Calif., 12th IEEE Non-Volatile Memory Systems and Applications Symposium (NVMSA 2023), Niigata, Japan, 30/08/23. https://doi.org/10.1109/NVMSA58981.2023.00024

Read Disturb and Reliability: The Complete Story for 3D CT NAND Flash. / Ren, Tianyu ; Li, Qiao ; Ye, Min et al.
Proceedings - 2023 12th IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA 2023. Los Alamitos, Calif.: IEEE, 2023. (Proceedings - IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Read Disturb and Reliability

T2 - 12th IEEE Non-Volatile Memory Systems and Applications Symposium (NVMSA 2023)

AU - Ren, Tianyu

AU - Li, Qiao

AU - Ye, Min

AU - Xue, Chun Jason

PY - 2023

Y1 - 2023

N2 - While providing large capacity through stacking more layers, high-density 3D NAND flash memories suffer from a higher raw bit error rate (RBER). The reliability behaviors of 3D flash become more complex than planar flash, especially for read disturbance. This work studies the reliability behaviors over read operations on high-density 3D charge trap (CT) NAND flash. Through comprehensive experiments on the latest real 3D flash chips, we present the complete story of read disturb and reliability. By performing repeated read operations on a block, the weak charging from pass-Through voltages could compensate for some charge leakage from retention loss. This process could reduce the retention errors of data. However, after a certain amount of read operations, the RBER will increase due to the continuous charging on flash cells. We also present the RBER impacts from read operations under different settings of major error sources, including program/erase (P/E) cycling, retention time, and read location. Based on these observations, we present discussions on read-intensive data allocations, as current flash blocks with more layers would experience much more read operations. © 2023 IEEE.

AB - While providing large capacity through stacking more layers, high-density 3D NAND flash memories suffer from a higher raw bit error rate (RBER). The reliability behaviors of 3D flash become more complex than planar flash, especially for read disturbance. This work studies the reliability behaviors over read operations on high-density 3D charge trap (CT) NAND flash. Through comprehensive experiments on the latest real 3D flash chips, we present the complete story of read disturb and reliability. By performing repeated read operations on a block, the weak charging from pass-Through voltages could compensate for some charge leakage from retention loss. This process could reduce the retention errors of data. However, after a certain amount of read operations, the RBER will increase due to the continuous charging on flash cells. We also present the RBER impacts from read operations under different settings of major error sources, including program/erase (P/E) cycling, retention time, and read location. Based on these observations, we present discussions on read-intensive data allocations, as current flash blocks with more layers would experience much more read operations. © 2023 IEEE.

KW - 3D Charge Trap Flash Memory

KW - Data Retention

KW - P/E Cycling

KW - Read Operations

UR - https://www.scopus.com/pages/publications/85174213390

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85174213390&origin=recordpage

U2 - 10.1109/NVMSA58981.2023.00024

DO - 10.1109/NVMSA58981.2023.00024

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9798350344974

T3 - Proceedings - IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA

BT - Proceedings - 2023 12th IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA 2023

PB - IEEE

CY - Los Alamitos, Calif.

Y2 - 30 August 2023 through 1 September 2023

ER -

Read Disturb and Reliability: The Complete Story for 3D CT NAND Flash

Abstract

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Research Keywords

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On Optimizing the Reliability and Performance on 3D NAND Flash Memory

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Read Disturb and Reliability: The Complete Story for 3D CT NAND Flash

Abstract

Publication series

Conference

Research Keywords

RGC Funding Information

Access Output

Other Access Options

Permanent Link

Other Files and Links

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Student theses

On Optimizing the Reliability and Performance on 3D NAND Flash Memory

Cite this