Reaction kinetics of nickel/silicon multilayer films

L. A. Clevenger; C. V. Thompson; R. C. Cammarata; K. N. Tu

doi:10.1063/1.99644

Reaction kinetics of nickel/silicon multilayer films

L. A. Clevenger
, C. V. Thompson
, R. C. Cammarata
, K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

107 Citations (Scopus)

Abstract

We report on the use of differential scanning calorimetry to study the temperatures and kinetics of nickel silicide formation from nickel/amorphous silicon multilayer films. When the layer thickness ratio of a multilayer film is 1:1, Ni₂ Si is the only phase to form. The activation energy for this reaction is 1.5 eV and the interdiffusivity pre-exponential is found to be 6 cm^-2s^-1. These values are in excellent agreement with values obtained using different techniques. The temperature at which Ni ₂ Si formation is observed a function of layer thickness, with the thinner layers reacting at lower temperatures. This layer thickness dependence can be explained by the lower reaction times for thinner layers. Upon mechanical impact, films composed of very thin layers (<125 Å) reacted explosively at room temperature to form Ni₂ Si. Explosive silicidation is presumed to occur when the rate of heat generation at the many reacting interfaces exceeds the rate of heat dissipation.

Original language	English
Pages (from-to)	795-797
Journal	Applied Physics Letters
Volume	52
Issue number	10
DOIs	https://doi.org/10.1063/1.99644
Publication status	Published - 1988
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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@article{e18f09653f8d4dcf876ea4c69b5d7950,

title = "Reaction kinetics of nickel/silicon multilayer films",

abstract = "We report on the use of differential scanning calorimetry to study the temperatures and kinetics of nickel silicide formation from nickel/amorphous silicon multilayer films. When the layer thickness ratio of a multilayer film is 1:1, Ni2 Si is the only phase to form. The activation energy for this reaction is 1.5 eV and the interdiffusivity pre-exponential is found to be 6 cm-2s-1. These values are in excellent agreement with values obtained using different techniques. The temperature at which Ni 2 Si formation is observed a function of layer thickness, with the thinner layers reacting at lower temperatures. This layer thickness dependence can be explained by the lower reaction times for thinner layers. Upon mechanical impact, films composed of very thin layers (<125 {\AA}) reacted explosively at room temperature to form Ni2 Si. Explosive silicidation is presumed to occur when the rate of heat generation at the many reacting interfaces exceeds the rate of heat dissipation.",

author = "Clevenger, \{L. A.\} and Thompson, \{C. V.\} and Cammarata, \{R. C.\} and Tu, \{K. N.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "1988",

doi = "10.1063/1.99644",

language = "English",

volume = "52",

pages = "795--797",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Reaction kinetics of nickel/silicon multilayer films

AU - Clevenger, L. A.

AU - Thompson, C. V.

AU - Cammarata, R. C.

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1988

Y1 - 1988

N2 - We report on the use of differential scanning calorimetry to study the temperatures and kinetics of nickel silicide formation from nickel/amorphous silicon multilayer films. When the layer thickness ratio of a multilayer film is 1:1, Ni2 Si is the only phase to form. The activation energy for this reaction is 1.5 eV and the interdiffusivity pre-exponential is found to be 6 cm-2s-1. These values are in excellent agreement with values obtained using different techniques. The temperature at which Ni 2 Si formation is observed a function of layer thickness, with the thinner layers reacting at lower temperatures. This layer thickness dependence can be explained by the lower reaction times for thinner layers. Upon mechanical impact, films composed of very thin layers (<125 Å) reacted explosively at room temperature to form Ni2 Si. Explosive silicidation is presumed to occur when the rate of heat generation at the many reacting interfaces exceeds the rate of heat dissipation.

AB - We report on the use of differential scanning calorimetry to study the temperatures and kinetics of nickel silicide formation from nickel/amorphous silicon multilayer films. When the layer thickness ratio of a multilayer film is 1:1, Ni2 Si is the only phase to form. The activation energy for this reaction is 1.5 eV and the interdiffusivity pre-exponential is found to be 6 cm-2s-1. These values are in excellent agreement with values obtained using different techniques. The temperature at which Ni 2 Si formation is observed a function of layer thickness, with the thinner layers reacting at lower temperatures. This layer thickness dependence can be explained by the lower reaction times for thinner layers. Upon mechanical impact, films composed of very thin layers (<125 Å) reacted explosively at room temperature to form Ni2 Si. Explosive silicidation is presumed to occur when the rate of heat generation at the many reacting interfaces exceeds the rate of heat dissipation.

UR - https://www.scopus.com/pages/publications/3743134945

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-3743134945&origin=recordpage

U2 - 10.1063/1.99644

DO - 10.1063/1.99644

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 52

SP - 795

EP - 797

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Reaction kinetics of nickel/silicon multilayer films

Abstract

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