Rapid Thermal Processing of Shallow Junctions Using Epitaxial CoSi2 as a Doping Source

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

3 Scopus Citations
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Author(s)

  • Erin C. Jones
  • Shinichi Ogawa
  • Paul Ameika
  • M. Lawrence A. Dass
  • David B. Fraser
  • Nathan W. Cheung

Related Research Unit(s)

Detail(s)

Original languageEnglish
Title of host publicationRapid Thermal and Integrated Processing III
EditorsSteven R. J. Brueck, Jeffrey C. Gelpey, Martin L. Green, Fred Roozeboom, Jimmie J. Wortman
PublisherMaterials Research Society
Pages339-343
Volume.
ISBN (print)9781558992429
Publication statusPublished - Aug 1994

Publication series

NameMRS Symposium Proceedings Series
Volume342
ISSN (Print)0272-9172

Conference

Title1994 Materials Research Society Spring Meeting
PlaceUnited States
CitySan Francisco, California
Period4 - 8 April 1994

Abstract

The electrical properties of shallow P+/N junctions formed by boron outdiffusion from polycrystalline and epitaxial CoSi2 contacts are discussed. The CoSi2 contacts are grown on (100) Si from a sputtered metal layer by rapid thermal annealing (RTA) at 900°C in forming gas. The epitaxial CoSi2 (epi-CoSi2) is made from layers of 15 nm Co / 2 nm Ti, and the polycrystalline material (poly-CoSi2) is made from a 15 nm Co layer with no Ti. Dopant is introduced by ion implantation into the silicide and the P+/N junctions are formed by a second RTA step. Junctions are found to have total leakage current densities as low as 4 nA/cm2 for poly-CoSi2 and 12 nA/cm2 for epi-CoSi2 at -5V and metallurgical junction depths of 60 nm beyond silicide/Si interface after 700-800°C annealing.

Bibliographic Note

Research Unit(s) information for this publication is provided by the author(s) concerned.

Citation Format(s)

Rapid Thermal Processing of Shallow Junctions Using Epitaxial CoSi2 as a Doping Source. / Jones, Erin C.; Ogawa, Shinichi; Ameika, Paul et al.
Rapid Thermal and Integrated Processing III. ed. / Steven R. J. Brueck; Jeffrey C. Gelpey; Martin L. Green; Fred Roozeboom; Jimmie J. Wortman. Vol. . Materials Research Society, 1994. p. 339-343 (MRS Symposium Proceedings Series; Vol. 342).

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review