RAPID THERMAL ANNEALING OF SHALLOW DIFFUSED CONTACT REGIONS IN GaAs.

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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Author(s)

Detail(s)

Original languageEnglish
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Pages383-389
Volume52
ISBN (Print)931837170
Publication statusPublished - 1986
Externally publishedYes

Publication series

Name
Volume52
ISSN (Electronic)0272-9172

Abstract

Rapid thermal annealing (RTA) is used to form shallow and heavily-doped contact regions in undoped semi-insulating GaAs. These layers are formed by using a high-intensity tungsten-halogen lamp to diffuse germanium and selenium from a deposited GeSe thin-film. RTA reduces surface degradation and permits better control of the diffusion profile than conventional furnace annealing. Optimal 20-second RTA occurs above a diffusion threshold at 950 degree C but below the failure of the SiO//2 encapsulant at 1100 degree C. The n plus regions created have peak impurity concentrations over 10**2**0/cm**3 at depths under 750 Angstrom with sheet resistances less than 60 OMEGA / D'ALEMB . Non-alloyed ohmic contacts exhibit specific contact resistivities of 2. 2 multiplied by 10** minus **4 OMEGA multiplied by (times) cm** minus **2.

Citation Format(s)

RAPID THERMAL ANNEALING OF SHALLOW DIFFUSED CONTACT REGIONS IN GaAs. / Kepler, N. J.; Cheung, N. W.; Chu, P. K.

Materials Research Society Symposia Proceedings. Vol. 52 Materials Research Soc, 1986. p. 383-389.

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review