@inproceedings{d6620d56a5cb4307b390f8d05d82bb8e,
title = "RAPID THERMAL ANNEALING OF SHALLOW DIFFUSED CONTACT REGIONS IN GaAs.",
abstract = "Rapid thermal annealing (RTA) is used to form shallow and heavily-doped contact regions in undoped semi-insulating GaAs. These layers are formed by using a high-intensity tungsten-halogen lamp to diffuse germanium and selenium from a deposited GeSe thin-film. RTA reduces surface degradation and permits better control of the diffusion profile than conventional furnace annealing. Optimal 20-second RTA occurs above a diffusion threshold at 950 degree C but below the failure of the SiO//2 encapsulant at 1100 degree C. The n plus regions created have peak impurity concentrations over 10**2**0/cm**3 at depths under 750 Angstrom with sheet resistances less than 60 OMEGA / D'ALEMB . Non-alloyed ohmic contacts exhibit specific contact resistivities of 2. 2 multiplied by 10** minus **4 OMEGA multiplied by (times) cm** minus **2.",
author = "Kepler, \{N. J.\} and Cheung, \{N. W.\} and Chu, \{P. K.\}",
year = "1986",
language = "English",
isbn = "931837170",
volume = "52",
publisher = "Materials Research Soc",
pages = "383--389",
booktitle = "Materials Research Society Symposia Proceedings",
}