Rapid growth of gallium oxide nanoribbons and nanowires on gallium arsenide using implantation-assisted techniques

K.C.  Lo; H.P.   Ho; K.Y. Fu; P.K. Chu

Rapid growth of gallium oxide nanoribbons and nanowires on gallium arsenide using implantation-assisted techniques

K.C. Lo
, H.P. Ho
, K.Y. Fu
, P.K. Chu

Research output: Conference Papers › RGC 32 - Refereed conference paper (without host publication) › peer-review

Abstract

We have synthesized gallium oxide (Ga₂O₃) nanoribbons and nanowires on gallium arsenide (GaAs) substrate by using Plasma Immersion Ion Implantation (PIII) and Rapid Thermal Annealing (RTA). Semi-insulating GaAs was treated with PIII of nitrogen, oxygen, acetylene (C₂H₂) or argon ions. For samples implanted with N₂, O₂, and C₂H₂ ions, subsequent RTA at 950°C within 2 minutes produced Ga₂O₃ nanoribbons on the substrate surface. The physical size, crystal structures and optical properties of the nanoribbons were examined by Raman spectroscopy, X-ray diffaction (XRD), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), and Cathodoluninescence (CL). Our results suggest that each implanted species plays a different roles in assisting the growth of these nano-materials. Moreover, growth of Ga₂O₃ nano-ribbons has also been demonstrated by evaporating gold templates on the implanted surface. The possible formation mechanism, vapor-solid (VS) and vapor-liquid-solid (VLS), of these nanoribbons are also discussed in this paper.

Original language	English
Publication status	Published - Sept 2005
Event	The 8th International Workshop on Plasma-based Ion Implantation and Deposition - Southwest Jiaotong University, Chengdu, China Duration: 18 Sept 2005 → 22 Sept 2005

Conference

Conference	The 8th International Workshop on Plasma-based Ion Implantation and Deposition
Place	China
City	Chengdu
Period	18/09/05 → 22/09/05

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@conference{3e8c8cad7763439ca6e32a55b38df277,

title = "Rapid growth of gallium oxide nanoribbons and nanowires on gallium arsenide using implantation-assisted techniques",

abstract = "We have synthesized gallium oxide (Ga2O3) nanoribbons and nanowires on gallium arsenide (GaAs) substrate by using Plasma Immersion Ion Implantation (PIII) and Rapid Thermal Annealing (RTA). Semi-insulating GaAs was treated with PIII of nitrogen, oxygen, acetylene (C2H2) or argon ions. For samples implanted with N2, O2, and C2H2 ions, subsequent RTA at 950°C within 2 minutes produced Ga2O3 nanoribbons on the substrate surface. The physical size, crystal structures and optical properties of the nanoribbons were examined by Raman spectroscopy, X-ray diffaction (XRD), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), and Cathodoluninescence (CL). Our results suggest that each implanted species plays a different roles in assisting the growth of these nano-materials. Moreover, growth of Ga2O3 nano-ribbons has also been demonstrated by evaporating gold templates on the implanted surface. The possible formation mechanism, vapor-solid (VS) and vapor-liquid-solid (VLS), of these nanoribbons are also discussed in this paper. ",

author = "K.C. Lo and H.P. Ho and K.Y. Fu and P.K. Chu",

year = "2005",

month = sep,

language = "English",

note = "The 8th International Workshop on Plasma-based Ion Implantation and Deposition ; Conference date: 18-09-2005 Through 22-09-2005",

}

Rapid growth of gallium oxide nanoribbons and nanowires on gallium arsenide using implantation-assisted techniques. / Lo, K.C. ; Ho, H.P. ; Fu, K.Y. et al.
2005. Paper presented at The 8th International Workshop on Plasma-based Ion Implantation and Deposition, Chengdu, China.

Research output: Conference Papers › RGC 32 - Refereed conference paper (without host publication) › peer-review

TY - CONF

T1 - Rapid growth of gallium oxide nanoribbons and nanowires on gallium arsenide using implantation-assisted techniques

AU - Lo, K.C.

AU - Ho, H.P.

AU - Fu, K.Y.

AU - Chu, P.K.

PY - 2005/9

Y1 - 2005/9

N2 - We have synthesized gallium oxide (Ga2O3) nanoribbons and nanowires on gallium arsenide (GaAs) substrate by using Plasma Immersion Ion Implantation (PIII) and Rapid Thermal Annealing (RTA). Semi-insulating GaAs was treated with PIII of nitrogen, oxygen, acetylene (C2H2) or argon ions. For samples implanted with N2, O2, and C2H2 ions, subsequent RTA at 950°C within 2 minutes produced Ga2O3 nanoribbons on the substrate surface. The physical size, crystal structures and optical properties of the nanoribbons were examined by Raman spectroscopy, X-ray diffaction (XRD), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), and Cathodoluninescence (CL). Our results suggest that each implanted species plays a different roles in assisting the growth of these nano-materials. Moreover, growth of Ga2O3 nano-ribbons has also been demonstrated by evaporating gold templates on the implanted surface. The possible formation mechanism, vapor-solid (VS) and vapor-liquid-solid (VLS), of these nanoribbons are also discussed in this paper.

AB - We have synthesized gallium oxide (Ga2O3) nanoribbons and nanowires on gallium arsenide (GaAs) substrate by using Plasma Immersion Ion Implantation (PIII) and Rapid Thermal Annealing (RTA). Semi-insulating GaAs was treated with PIII of nitrogen, oxygen, acetylene (C2H2) or argon ions. For samples implanted with N2, O2, and C2H2 ions, subsequent RTA at 950°C within 2 minutes produced Ga2O3 nanoribbons on the substrate surface. The physical size, crystal structures and optical properties of the nanoribbons were examined by Raman spectroscopy, X-ray diffaction (XRD), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), and Cathodoluninescence (CL). Our results suggest that each implanted species plays a different roles in assisting the growth of these nano-materials. Moreover, growth of Ga2O3 nano-ribbons has also been demonstrated by evaporating gold templates on the implanted surface. The possible formation mechanism, vapor-solid (VS) and vapor-liquid-solid (VLS), of these nanoribbons are also discussed in this paper.

M3 - RGC 32 - Refereed conference paper (without host publication)

T2 - The 8th International Workshop on Plasma-based Ion Implantation and Deposition

Y2 - 18 September 2005 through 22 September 2005

ER -

Rapid growth of gallium oxide nanoribbons and nanowires on gallium arsenide using implantation-assisted techniques

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