TY - JOUR
T1 - Rapid c-reactive protein detection with AlGaN/GaN high electron mobility transistors in an integrated microfluidic system
AU - Kang, Yen-Wen
AU - Lin, Chih-Lin
AU - Chang, Ko-Wei
AU - Chang, Wen-Hsin
AU - Lee, Gwo-Bin
AU - Wang, Yu-Lin
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2014
Y1 - 2014
N2 - Cardiovascular diseases are one of the most serious diseases worldwide and cause about 25 million deaths every year. Creactive protein (CRP) in human blood is a well-known biomarker related to the cardiovascular diseases. The concentration of CRP identifies the risk for cardiovascular diseases. To measure the concentration of CRP, the CRP-specific aptamer immobilized AlGaN/GaN high electro mobility transistors (HEMTs) were used to recognize CRP and transfer it into electric signals. The AlGaN/GaN HEMT was further integrated with a multifunctional microfluidic system. The integrated microfluidic system enhanced the detection accuracy with stable detecting environment. It may be promising for on-site monitoring of CRP in the near future.
AB - Cardiovascular diseases are one of the most serious diseases worldwide and cause about 25 million deaths every year. Creactive protein (CRP) in human blood is a well-known biomarker related to the cardiovascular diseases. The concentration of CRP identifies the risk for cardiovascular diseases. To measure the concentration of CRP, the CRP-specific aptamer immobilized AlGaN/GaN high electro mobility transistors (HEMTs) were used to recognize CRP and transfer it into electric signals. The AlGaN/GaN HEMT was further integrated with a multifunctional microfluidic system. The integrated microfluidic system enhanced the detection accuracy with stable detecting environment. It may be promising for on-site monitoring of CRP in the near future.
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U2 - 10.1149/06104.0095ecst
DO - 10.1149/06104.0095ecst
M3 - RGC 21 - Publication in refereed journal
SN - 1938-5862
VL - 61
SP - 95
EP - 100
JO - ECS Transactions
JF - ECS Transactions
IS - 4
T2 - Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting
Y2 - 11 May 2014 through 15 May 2014
ER -
