Abstract
A Raman spectroscopy study of doped versus undoped ZnO layers is presented. The layers were grown by RF magnetron sputtering and the doping with Al, Sb and Mn was achieved by ion implantation with subsequent annealing. First-order Raman response measured under λ=488 nm excitation is discussed. It is shown that doping with any of the impurities used in this work produces a strong enhancement of the longitudinal optical (LO) phonon band, which is attributed to the intra-band Fröhlich mechanism. In addition, doping with Mn results in an extra mode located at 530 cm-1, tentatively attributed to a local vibrational mode of Mn substituting Zn in the lattice sites. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Original language | English |
|---|---|
| Pages (from-to) | 2290-2293 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 7 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2010 |
| Externally published | Yes |
| Event | E-MRS 2009 Spring Meeting, Symposium F: Advances in Transparent Electronics: From Materials to Devices - Strasbourg, France Duration: 8 Jun 2009 → 12 Jun 2009 |
Research Keywords
- Doping
- Magnetron sputtering
- Phonons
- Raman scattering
- ZnO
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