Quasi-freestanding, striped WS2 monolayer with an invariable band gap on Au(001)

Min Hong; Xiebo Zhou; Jianping Shi; Yue Qi; Zhepeng Zhang; Qiyi Fang; Yaguang Guo; Yajuan Sun; Zhongfan Liu; Yuanchang Li; Qian Wang; Yanfeng Zhang

doi:10.1007/s12274-017-1601-8

Quasi-freestanding, striped WS₂ monolayer with an invariable band gap on Au(001)

Min Hong, Xiebo Zhou, Jianping Shi, Yue Qi, Zhepeng Zhang, Qiyi Fang, Yaguang Guo, Yajuan Sun, Zhongfan Liu, Yuanchang Li, Qian Wang, Yanfeng Zhang

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

14 Citations (Scopus)

Abstract

Revealing the structural/electronic features and interfacial interactions of monolayer MoS₂ and WS₂ on metals is essential to evaluating the performance of related devices. In this study, we focused on the atomic-scale features of monolayer WS₂ on Au(001) synthesized via chemical vapor deposition. Scanning tunneling microscopy and spectroscopy reveal that the WS₂/Au(001) system exhibits a striped superstructure similar to that of MoS₂/Au(001) but weaker interfacial interactions, as evidenced by experimental and theoretical investigations. Specifically, the WS₂/Au(001) band gap exhibits a relatively intrinsic value of ∼2.0 eV. However, the band gap can gradually decrease to ∼1.5 eV when the sample annealing temperature increases from ∼370 to 720 °C. In addition, the doping level (or Fermi energy) of monolayer WS₂/Au(001) varies little over the valley and ridge regions of the striped patterns because of the homogenous distributions of point defects introduced by annealing. Briefly, this work provides an in-depth investigation into the interfacial interactions and electronic properties of monolayer MX₂ on metal substrates. [Figure not available: see fulltext.]. © 2017, Tsinghua University Press and Springer-Verlag GmbH Germany.

Original language	English
Pages (from-to)	3875-3884
Journal	Nano Research
Volume	10
Issue number	11
DOIs	https://doi.org/10.1007/s12274-017-1601-8
Publication status	Published - 1 Nov 2017
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to <a href="mailto:[email protected]">[email protected]</a>.

Funding

We acknowledge financial support by the National Natural Science Foundation of China (Nos. 51472008 and 51290272), the National Key Research and Development Program of China (No. 2016YFA0200103), the Beijing Municipal Science and Technology Planning Project (No. Z151100003315013), the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics (No. KF201601) and the ENN Energy Research Institute.

Research Keywords

Au(001)
interfacial interaction
STM/STS
striped superstructure
WS2

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title = "Quasi-freestanding, striped WS2 monolayer with an invariable band gap on Au(001)",

abstract = "Revealing the structural/electronic features and interfacial interactions of monolayer MoS2 and WS2 on metals is essential to evaluating the performance of related devices. In this study, we focused on the atomic-scale features of monolayer WS2 on Au(001) synthesized via chemical vapor deposition. Scanning tunneling microscopy and spectroscopy reveal that the WS2/Au(001) system exhibits a striped superstructure similar to that of MoS2/Au(001) but weaker interfacial interactions, as evidenced by experimental and theoretical investigations. Specifically, the WS2/Au(001) band gap exhibits a relatively intrinsic value of ∼2.0 eV. However, the band gap can gradually decrease to ∼1.5 eV when the sample annealing temperature increases from ∼370 to 720 °C. In addition, the doping level (or Fermi energy) of monolayer WS2/Au(001) varies little over the valley and ridge regions of the striped patterns because of the homogenous distributions of point defects introduced by annealing. Briefly, this work provides an in-depth investigation into the interfacial interactions and electronic properties of monolayer MX2 on metal substrates. [Figure not available: see fulltext.]. {\textcopyright} 2017, Tsinghua University Press and Springer-Verlag GmbH Germany.",

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T1 - Quasi-freestanding, striped WS2 monolayer with an invariable band gap on Au(001)

AU - Hong, Min

AU - Zhou, Xiebo

AU - Shi, Jianping

AU - Qi, Yue

AU - Zhang, Zhepeng

AU - Fang, Qiyi

AU - Guo, Yaguang

AU - Sun, Yajuan

AU - Liu, Zhongfan

AU - Li, Yuanchang

AU - Wang, Qian

AU - Zhang, Yanfeng

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PY - 2017/11/1

Y1 - 2017/11/1

N2 - Revealing the structural/electronic features and interfacial interactions of monolayer MoS2 and WS2 on metals is essential to evaluating the performance of related devices. In this study, we focused on the atomic-scale features of monolayer WS2 on Au(001) synthesized via chemical vapor deposition. Scanning tunneling microscopy and spectroscopy reveal that the WS2/Au(001) system exhibits a striped superstructure similar to that of MoS2/Au(001) but weaker interfacial interactions, as evidenced by experimental and theoretical investigations. Specifically, the WS2/Au(001) band gap exhibits a relatively intrinsic value of ∼2.0 eV. However, the band gap can gradually decrease to ∼1.5 eV when the sample annealing temperature increases from ∼370 to 720 °C. In addition, the doping level (or Fermi energy) of monolayer WS2/Au(001) varies little over the valley and ridge regions of the striped patterns because of the homogenous distributions of point defects introduced by annealing. Briefly, this work provides an in-depth investigation into the interfacial interactions and electronic properties of monolayer MX2 on metal substrates. [Figure not available: see fulltext.]. © 2017, Tsinghua University Press and Springer-Verlag GmbH Germany.

AB - Revealing the structural/electronic features and interfacial interactions of monolayer MoS2 and WS2 on metals is essential to evaluating the performance of related devices. In this study, we focused on the atomic-scale features of monolayer WS2 on Au(001) synthesized via chemical vapor deposition. Scanning tunneling microscopy and spectroscopy reveal that the WS2/Au(001) system exhibits a striped superstructure similar to that of MoS2/Au(001) but weaker interfacial interactions, as evidenced by experimental and theoretical investigations. Specifically, the WS2/Au(001) band gap exhibits a relatively intrinsic value of ∼2.0 eV. However, the band gap can gradually decrease to ∼1.5 eV when the sample annealing temperature increases from ∼370 to 720 °C. In addition, the doping level (or Fermi energy) of monolayer WS2/Au(001) varies little over the valley and ridge regions of the striped patterns because of the homogenous distributions of point defects introduced by annealing. Briefly, this work provides an in-depth investigation into the interfacial interactions and electronic properties of monolayer MX2 on metal substrates. [Figure not available: see fulltext.]. © 2017, Tsinghua University Press and Springer-Verlag GmbH Germany.

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