Quasi-analytical model of ballistic cylindrical surrounding gate nanowire MOSFET

Wanjie Xu; Hei Wong; Kuniyuki Kakushima; Hiroshi Iwai

doi:10.1016/j.mee.2015.03.002

Quasi-analytical model of ballistic cylindrical surrounding gate nanowire MOSFET

Wanjie Xu^*
, Hei Wong
, Kuniyuki Kakushima
, Hiroshi Iwai

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

16 Citations (Scopus)

Abstract

Abstract A quasi-analytical model bas been developed for predicting the current-voltage characteristics of a cylindrical surrounding gate metal-oxide-semiconductor field-effect-transistor (MOSFET) by taking ballistic transport and quantum confinement effects into consideration. Quantum effect was incorporated in the Poisson's equation in a self-consistent way together with the calculated subband energy levels. The model was validated with numerical simulation. Better agreements were obtained as compared with several previous models. Our results further revealed that the top of barrier (ToB) approximation is not accurate enough at large gate and drain biases; tunneling current and better electrostatic model have to be taken into account.

Original language	English
Article number	9754
Pages (from-to)	111-117
Journal	Microelectronic Engineering
Volume	138
DOIs	https://doi.org/10.1016/j.mee.2015.03.002
Publication status	Published - 20 Apr 2015

Research Keywords

Ballistic transport
Cylindrical surrounding gate MOSFETs
Quantum effect
Quasi-analytical model

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@article{255d838383494c2ca2c3619ed9b08946,

title = "Quasi-analytical model of ballistic cylindrical surrounding gate nanowire MOSFET",

abstract = "Abstract A quasi-analytical model bas been developed for predicting the current-voltage characteristics of a cylindrical surrounding gate metal-oxide-semiconductor field-effect-transistor (MOSFET) by taking ballistic transport and quantum confinement effects into consideration. Quantum effect was incorporated in the Poisson's equation in a self-consistent way together with the calculated subband energy levels. The model was validated with numerical simulation. Better agreements were obtained as compared with several previous models. Our results further revealed that the top of barrier (ToB) approximation is not accurate enough at large gate and drain biases; tunneling current and better electrostatic model have to be taken into account.",

keywords = "Ballistic transport, Cylindrical surrounding gate MOSFETs, Quantum effect, Quasi-analytical model",

author = "Wanjie Xu and Hei Wong and Kuniyuki Kakushima and Hiroshi Iwai",

year = "2015",

month = apr,

day = "20",

doi = "10.1016/j.mee.2015.03.002",

language = "English",

volume = "138",

pages = "111--117",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Quasi-analytical model of ballistic cylindrical surrounding gate nanowire MOSFET

AU - Xu, Wanjie

AU - Wong, Hei

AU - Kakushima, Kuniyuki

AU - Iwai, Hiroshi

PY - 2015/4/20

Y1 - 2015/4/20

N2 - Abstract A quasi-analytical model bas been developed for predicting the current-voltage characteristics of a cylindrical surrounding gate metal-oxide-semiconductor field-effect-transistor (MOSFET) by taking ballistic transport and quantum confinement effects into consideration. Quantum effect was incorporated in the Poisson's equation in a self-consistent way together with the calculated subband energy levels. The model was validated with numerical simulation. Better agreements were obtained as compared with several previous models. Our results further revealed that the top of barrier (ToB) approximation is not accurate enough at large gate and drain biases; tunneling current and better electrostatic model have to be taken into account.

AB - Abstract A quasi-analytical model bas been developed for predicting the current-voltage characteristics of a cylindrical surrounding gate metal-oxide-semiconductor field-effect-transistor (MOSFET) by taking ballistic transport and quantum confinement effects into consideration. Quantum effect was incorporated in the Poisson's equation in a self-consistent way together with the calculated subband energy levels. The model was validated with numerical simulation. Better agreements were obtained as compared with several previous models. Our results further revealed that the top of barrier (ToB) approximation is not accurate enough at large gate and drain biases; tunneling current and better electrostatic model have to be taken into account.

KW - Ballistic transport

KW - Cylindrical surrounding gate MOSFETs

KW - Quantum effect

KW - Quasi-analytical model

UR - https://www.scopus.com/pages/publications/84925622823

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84925622823&origin=recordpage

U2 - 10.1016/j.mee.2015.03.002

DO - 10.1016/j.mee.2015.03.002

M3 - RGC 21 - Publication in refereed journal

SN - 0167-9317

VL - 138

SP - 111

EP - 117

JO - Microelectronic Engineering

JF - Microelectronic Engineering

M1 - 9754

ER -

Quasi-analytical model of ballistic cylindrical surrounding gate nanowire MOSFET

Abstract

Research Keywords

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