TY - JOUR
T1 - Quasi-analytical model of ballistic cylindrical surrounding gate nanowire MOSFET
AU - Xu, Wanjie
AU - Wong, Hei
AU - Kakushima, Kuniyuki
AU - Iwai, Hiroshi
PY - 2015/4/20
Y1 - 2015/4/20
N2 - Abstract A quasi-analytical model bas been developed for predicting the current-voltage characteristics of a cylindrical surrounding gate metal-oxide-semiconductor field-effect-transistor (MOSFET) by taking ballistic transport and quantum confinement effects into consideration. Quantum effect was incorporated in the Poisson's equation in a self-consistent way together with the calculated subband energy levels. The model was validated with numerical simulation. Better agreements were obtained as compared with several previous models. Our results further revealed that the top of barrier (ToB) approximation is not accurate enough at large gate and drain biases; tunneling current and better electrostatic model have to be taken into account.
AB - Abstract A quasi-analytical model bas been developed for predicting the current-voltage characteristics of a cylindrical surrounding gate metal-oxide-semiconductor field-effect-transistor (MOSFET) by taking ballistic transport and quantum confinement effects into consideration. Quantum effect was incorporated in the Poisson's equation in a self-consistent way together with the calculated subband energy levels. The model was validated with numerical simulation. Better agreements were obtained as compared with several previous models. Our results further revealed that the top of barrier (ToB) approximation is not accurate enough at large gate and drain biases; tunneling current and better electrostatic model have to be taken into account.
KW - Ballistic transport
KW - Cylindrical surrounding gate MOSFETs
KW - Quantum effect
KW - Quasi-analytical model
UR - http://www.scopus.com/inward/record.url?scp=84925622823&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84925622823&origin=recordpage
U2 - 10.1016/j.mee.2015.03.002
DO - 10.1016/j.mee.2015.03.002
M3 - RGC 21 - Publication in refereed journal
SN - 0167-9317
VL - 138
SP - 111
EP - 117
JO - Microelectronic Engineering
JF - Microelectronic Engineering
M1 - 9754
ER -