Quantum pumping of valley current in strain engineered graphene

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Original languageEnglish
Article number13105
Journal / PublicationApplied Physics Letters
Volume104
Issue number1
Publication statusPublished - 6 Jan 2014

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Abstract

We studied the generation of valley dependent current by adiabatic quantum pumping in monolayer graphene in the presence of electric potential barriers, ferromagnetic field and strain. The pumped currents in the two valleys have same magnitudes and opposite directions; thus, a pure valley current is generated. The oscillation of the pumped pure valley current is determined by the Fabry-Perot resonances formed in the structure. In our calculation, the pumped pure valley current can be as high as 50 nA, which is measurable using present technologies. The proposed device is useful for the development of graphene valleytronic devices. © 2014 AIP Publishing LLC.

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Quantum pumping of valley current in strain engineered graphene. / Wang, Jing; Chan, K. S.; Lin, Zijing.
In: Applied Physics Letters, Vol. 104, No. 1, 13105, 06.01.2014.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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