Quantum pumping of layer pseudospin current in biased bilayer graphene

In bilayer graphene, the top layer and the bottom layer can be regarded as a kind of 'pseudospin'. By applying a voltage bias between the two layers, the pseudospin is polarized along the direction perpendicular to the graphene plane. Considering a biased-unbiased-biased bilayer graphene structure, we show that it is possible to use quantum pumping to generate a layer pseudospin polarized current which is highly localized in the layer with a higher potential. By reversing the bias direction, the pumped current is tuned to flow in the opposite layer. The proposed structure which generates layer pseudospin current will have applications in the development of layer pseudospin devices.