Quantum dot formation and dynamic scaling behavior of SnO2 nanocrystals induced by pulsed delivery

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

23 Scopus Citations
View graph of relations

Author(s)

Detail(s)

Original languageEnglish
Article number33115
Pages (from-to)1-3
Journal / PublicationApplied Physics Letters
Volume88
Issue number3
Publication statusPublished - 2006

Abstract

Quantum dot formation and dynamic scaling behavior of Sn O2 nanocrystals in coalescence regime for growth by pulsed-laser deposition is explored experimentally and theoretically, and the same is compared with that for continuous vapor deposition such as molecular-beam epitaxy. Using high-resolution transmission electron microscopy, unusual quantum dots of Sn O2 nanocrystals are studied. We present kinetic Monte-Carlo simulations for pulsed-laser deposition in the submonolayer regime and give a description of the island distance versus pulse intensity. We found that the scaling exponent for pulsed-laser deposition is 1.28±0.03, which is significantly lower as compared to that for molecular-beam epitaxy (1.62±0.03). Theoretical simulations reveal that this attractive difference can be pursued to the large fraction of multiple droplet coalescence under pulsed vapor delivery. © 2006 American Institute of Physics.