Abstract
Quantum dot formation and dynamic scaling behavior of Sn O2 nanocrystals in coalescence regime for growth by pulsed-laser deposition is explored experimentally and theoretically, and the same is compared with that for continuous vapor deposition such as molecular-beam epitaxy. Using high-resolution transmission electron microscopy, unusual quantum dots of Sn O2 nanocrystals are studied. We present kinetic Monte-Carlo simulations for pulsed-laser deposition in the submonolayer regime and give a description of the island distance versus pulse intensity. We found that the scaling exponent for pulsed-laser deposition is 1.28±0.03, which is significantly lower as compared to that for molecular-beam epitaxy (1.62±0.03). Theoretical simulations reveal that this attractive difference can be pursued to the large fraction of multiple droplet coalescence under pulsed vapor delivery. © 2006 American Institute of Physics.
| Original language | English |
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| Article number | 33115 |
| Pages (from-to) | 1-3 |
| Journal | Applied Physics Letters |
| Volume | 88 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2006 |