Quantum confinement of crystalline silicon nanotubes with nonuniform wall thickness: Implication to modulation doping

Binghai Yan; Gang Zhou; Xiao Cheng Zeng; Jian Wu; Bing-Lin Gu; Wenhui Duan

doi:10.1063/1.2778756

Quantum confinement of crystalline silicon nanotubes with nonuniform wall thickness: Implication to modulation doping

Binghai Yan
, Gang Zhou
, Xiao Cheng Zeng
, Jian Wu
, Bing-Lin Gu
, Wenhui Duan^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

13 Citations (Scopus)

Abstract

First-principles calculations of crystalline silicon nanotubes (SiNTs) show that nonuniformity in wall thickness can cause sizable variation in the band gap as well as notable shift in the optical absorption spectrum. A unique quantum confinement behavior is observed: the electronic wave functions of the valence band maximum and conduction band minimum are due mainly to atoms located in the thicker side of the tube wall. This is advantageous to spatially separate the doping impurities from the conducting channel in doped SiNTs. Practically, the performance of the SiNT-based transistors may be substantially improved by selective pn doping in the thinner side of the tube wall in the spirit of modulation doping. © 2007 American Institute of Physics.

Original language	English
Article number	103107
Journal	Applied Physics Letters
Volume	91
Issue number	10
DOIs	https://doi.org/10.1063/1.2778756
Publication status	Published - 2007
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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@article{224850e12d94465d9610095d625de07e,

title = "Quantum confinement of crystalline silicon nanotubes with nonuniform wall thickness: Implication to modulation doping",

abstract = "First-principles calculations of crystalline silicon nanotubes (SiNTs) show that nonuniformity in wall thickness can cause sizable variation in the band gap as well as notable shift in the optical absorption spectrum. A unique quantum confinement behavior is observed: the electronic wave functions of the valence band maximum and conduction band minimum are due mainly to atoms located in the thicker side of the tube wall. This is advantageous to spatially separate the doping impurities from the conducting channel in doped SiNTs. Practically, the performance of the SiNT-based transistors may be substantially improved by selective pn doping in the thinner side of the tube wall in the spirit of modulation doping. {\textcopyright} 2007 American Institute of Physics.",

author = "Binghai Yan and Gang Zhou and Zeng, \{Xiao Cheng\} and Jian Wu and Bing-Lin Gu and Wenhui Duan",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "2007",

doi = "10.1063/1.2778756",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Quantum confinement of crystalline silicon nanotubes with nonuniform wall thickness

T2 - Implication to modulation doping

AU - Yan, Binghai

AU - Zhou, Gang

AU - Zeng, Xiao Cheng

AU - Wu, Jian

AU - Gu, Bing-Lin

AU - Duan, Wenhui

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2007

Y1 - 2007

N2 - First-principles calculations of crystalline silicon nanotubes (SiNTs) show that nonuniformity in wall thickness can cause sizable variation in the band gap as well as notable shift in the optical absorption spectrum. A unique quantum confinement behavior is observed: the electronic wave functions of the valence band maximum and conduction band minimum are due mainly to atoms located in the thicker side of the tube wall. This is advantageous to spatially separate the doping impurities from the conducting channel in doped SiNTs. Practically, the performance of the SiNT-based transistors may be substantially improved by selective pn doping in the thinner side of the tube wall in the spirit of modulation doping. © 2007 American Institute of Physics.

AB - First-principles calculations of crystalline silicon nanotubes (SiNTs) show that nonuniformity in wall thickness can cause sizable variation in the band gap as well as notable shift in the optical absorption spectrum. A unique quantum confinement behavior is observed: the electronic wave functions of the valence band maximum and conduction band minimum are due mainly to atoms located in the thicker side of the tube wall. This is advantageous to spatially separate the doping impurities from the conducting channel in doped SiNTs. Practically, the performance of the SiNT-based transistors may be substantially improved by selective pn doping in the thinner side of the tube wall in the spirit of modulation doping. © 2007 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/34548491360

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-34548491360&origin=recordpage

U2 - 10.1063/1.2778756

DO - 10.1063/1.2778756

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 103107

ER -

Quantum confinement of crystalline silicon nanotubes with nonuniform wall thickness: Implication to modulation doping

Abstract

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