Quantum confinement and electron spin resonance characteristics in Si-implanted silicon oxide films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • V. A. Gritsenko
  • V. A. Nadolinny
  • K. S. Zhuravlev
  • J. B. Xu
  • H. Wong

Related Research Unit(s)

Detail(s)

Original languageEnglish
Article number84502
Journal / PublicationJournal of Applied Physics
Volume109
Issue number8
Publication statusPublished - 15 Apr 2011

Abstract

The nature of electron and hole trapping in silicon ion-implanted silicon oxide (SiO2) with a dose of 1016 cm-2 were studied using photoluminescence and electron spin resonance (ESR) measurements. We observed an ESR signal with g = 2.006 after hole and electron injections. These results unambiguously imply that the Si nanoclusters created by the high-dose Si implants are both electron and hole traps in the SiO2 films. © 2011 American Institute of Physics.

Citation Format(s)

Quantum confinement and electron spin resonance characteristics in Si-implanted silicon oxide films. / Gritsenko, V. A.; Nadolinny, V. A.; Zhuravlev, K. S.; Xu, J. B.; Wong, H.

In: Journal of Applied Physics, Vol. 109, No. 8, 84502, 15.04.2011.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review