Quantum confinement and electron spin resonance characteristics in Si-implanted silicon oxide films

V. A. Gritsenko; V. A. Nadolinny; K. S. Zhuravlev; J. B. Xu; H. Wong

doi:10.1063/1.3573482

Author(s)

V. A. Gritsenko
V. A. Nadolinny
K. S. Zhuravlev
J. B. Xu
H. Wong

Related Research Unit(s)

Department of Electrical Engineering

Detail(s)

Original language	English
Article number	84502
Journal / Publication	Journal of Applied Physics
Volume	109
Issue number	8
Publication status	Published - 15 Apr 2011

Link(s)

DOI	DOI https://doi.org/10.1063/1.3573482 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-79955707083&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(f735d61a-3bff-47aa-9cdb-733212198b84).html

Abstract

The nature of electron and hole trapping in silicon ion-implanted silicon oxide (SiO₂) with a dose of 10¹⁶ cm^-2 were studied using photoluminescence and electron spin resonance (ESR) measurements. We observed an ESR signal with g = 2.006 after hole and electron injections. These results unambiguously imply that the Si nanoclusters created by the high-dose Si implants are both electron and hole traps in the SiO₂ films. © 2011 American Institute of Physics.

Citation Format(s)

[ RIS ] [ BibTeX ]

Quantum confinement and electron spin resonance characteristics in Si-implanted silicon oxide films. / Gritsenko, V. A.; Nadolinny, V. A.; Zhuravlev, K. S. et al.
In: Journal of Applied Physics, Vol. 109, No. 8, 84502, 15.04.2011.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Gritsenko, VA, Nadolinny, VA, Zhuravlev, KS, Xu, JB & Wong, H 2011, 'Quantum confinement and electron spin resonance characteristics in Si-implanted silicon oxide films', Journal of Applied Physics, vol. 109, no. 8, 84502. https://doi.org/10.1063/1.3573482

Gritsenko, V. A., Nadolinny, V. A., Zhuravlev, K. S., Xu, J. B., & Wong, H. (2011). Quantum confinement and electron spin resonance characteristics in Si-implanted silicon oxide films. Journal of Applied Physics, 109(8), Article 84502. https://doi.org/10.1063/1.3573482

Gritsenko VA, Nadolinny VA, Zhuravlev KS, Xu JB, Wong H. Quantum confinement and electron spin resonance characteristics in Si-implanted silicon oxide films. Journal of Applied Physics. 2011 Apr 15;109(8):84502. doi: 10.1063/1.3573482

Gritsenko, V. A. ; Nadolinny, V. A. ; Zhuravlev, K. S. et al. / Quantum confinement and electron spin resonance characteristics in Si-implanted silicon oxide films. In: Journal of Applied Physics. 2011 ; Vol. 109, No. 8.