Quantitative Depth Profiling of B and P in Borophosphosilicate Glass

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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Author(s)

Detail(s)

Original languageEnglish
Title of host publicationSecondary Ion Mass Spectrometry SIMS IV
Subtitle of host publicationProceedings of the Fourth International Conference
EditorsA. Benninghoven, J. Okano, R. Shimizu, H. W. Werner
Pages332-335
ISBN (Electronic)978-3-642-82256-8
Publication statusPublished - 13 Nov 1983
Externally publishedYes

Publication series

NameSpringer Series in Chemical Physics
Volume36

Conference

Title4th International Conference on Secondary Ion Mass Spectrometry (SIMS-IV)
PlaceJapan
CityOsaka
Period13 - 19 November 1983

Abstract

Borophosphosilicate glass (BPSG) is used in the semiconductor industry for two purposes: (1) as a top passivation layer on electronic devices and (2) as an  intermetal dielectric (typically between aluminum and polysilicon) [1,2]. The advantages of BPSG over undoped Si02 is its ability to reflow within device-compatible temperature ranges [3,4] and its formation of better aluminum contact step coverage [5]. In addition, the presence of phosphorus in the passivation layer serves to getter impurities and minimizes the penetration of alkali metals into the device [6]. Although these advantages are significant, the high P concentration in BPSG, coupled with its high porosity and hygroscopicity (related to P contents), is a major cause of corrosion of aluminum runs in devices [7,8]. As a consequence, it is necessary to have a thin phosphorus free glass layer between the BPSG and A1.

Research Area(s)

  • Electron Microprobe, Passivation Layer, Relative Sensitivety Factor, Sample Voltage, Solid State Technology

Citation Format(s)

Quantitative Depth Profiling of B and P in Borophosphosilicate Glass. / CHU, P. K. .

Secondary Ion Mass Spectrometry SIMS IV: Proceedings of the Fourth International Conference. ed. / A. Benninghoven; J. Okano; R. Shimizu; H. W. Werner. 1983. p. 332-335 (Springer Series in Chemical Physics; Vol. 36).

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review