Quantifying thickness-dependent charge mediated magnetoelectric coupling in magnetic/dielectric thin film heterostructures

Z. Zhou; T. X. Nan; Y. Gao; X. Yang; S. Beguhn; M. Li; Y. Lu; J. L. Wang; M. Liu; K. Mahalingam; B. M. Howe; G. J. Brown; N. X. Sun

doi:10.1063/1.4839276

Author(s)

Z. Zhou
T. X. Nan
Y. Gao
X. Yang
S. Beguhn
M. Li
Y. Lu
M. Liu
K. Mahalingam
B. M. Howe
G. J. Brown
N. X. Sun

Detail(s)

Original language	English
Article number	232906
Journal / Publication	Applied Physics Letters
Volume	103
Issue number	23
Publication status	Published - 2 Dec 2013
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.4839276 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-84889764279&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(f79fe589-4d52-4909-81d1-5f3399d2faaf).html

Abstract

Precise quantification of the magnetoelectric coupling strength in surface charge induced magnetoelectric effect was investigated in NiFe/SrTiO₃ thin film heterostructures with different ultra-thin NiFe thicknesses through voltage induced ferromagnetic resonance. The voltage induced ferromagnetic resonance field shifts in these NiFe/SrTiO₃ thin films heterostructures showed a maximum value of 65 Oe at an intermediate NiFe layer thickness of ∼1.2 nm, which was interpreted based on the thin film growth model at the low-thicknesses and on the charge screening effect at large thicknesses. The precise quantification and understanding of the magnetoelectric coupling in magnetic/dielectric thin films heterostructures constitute an important step toward real applications. © 2013 AIP Publishing LLC.

Bibliographic Note

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Citation Format(s)

[ RIS ] [ BibTeX ]

Quantifying thickness-dependent charge mediated magnetoelectric coupling in magnetic/dielectric thin film heterostructures. / Zhou, Z.; Nan, T. X.; Gao, Y. et al.
In: Applied Physics Letters, Vol. 103, No. 23, 232906, 02.12.2013.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Zhou, Z, Nan, TX, Gao, Y, Yang, X, Beguhn, S, Li, M, Lu, Y, Wang, JL, Liu, M, Mahalingam, K, Howe, BM, Brown, GJ & Sun, NX 2013, 'Quantifying thickness-dependent charge mediated magnetoelectric coupling in magnetic/dielectric thin film heterostructures', Applied Physics Letters, vol. 103, no. 23, 232906. https://doi.org/10.1063/1.4839276

Zhou, Z., Nan, T. X., Gao, Y., Yang, X., Beguhn, S., Li, M., Lu, Y., Wang, J. L., Liu, M., Mahalingam, K., Howe, B. M., Brown, G. J., & Sun, N. X. (2013). Quantifying thickness-dependent charge mediated magnetoelectric coupling in magnetic/dielectric thin film heterostructures. Applied Physics Letters, 103(23), Article 232906. https://doi.org/10.1063/1.4839276

Zhou Z, Nan TX, Gao Y, Yang X, Beguhn S, Li M et al. Quantifying thickness-dependent charge mediated magnetoelectric coupling in magnetic/dielectric thin film heterostructures. Applied Physics Letters. 2013 Dec 2;103(23):232906. doi: 10.1063/1.4839276

Zhou, Z. ; Nan, T. X. ; Gao, Y. et al. / Quantifying thickness-dependent charge mediated magnetoelectric coupling in magnetic/dielectric thin film heterostructures. In: Applied Physics Letters. 2013 ; Vol. 103, No. 23.