PZT thin film preparation on Pt/Ti electrode by RF magnetron sputtering

D. X. Lu; E. Y. B. Pun; Y. L. Zhang; E. M. W. Wong; P. S. Chung; L. B. Huang; Z. Y. Lee

doi:10.1109/ISAF.1996.602786

PZT thin film preparation on Pt/Ti electrode by RF magnetron sputtering

D. X. Lu
, E. Y. B. Pun
, Y. L. Zhang
, E. M. W. Wong
, P. S. Chung
, L. B. Huang
, Z. Y. Lee

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

3 Citations (Scopus)

Abstract

We have investigated the structural and electrical properties of lead-zirconate-titanate (PZT) thin films prepared on Pt/Ti/Si substrates by rf magnetron sputtering. The as-deposited 1.0 μm-thick thin films were completely crystallized into the perovskite phase at 500 °C for 60 min in oxygen. The structure and the lattice parameter, the dielectric loss and the dielectric constant have been examined as a function of annealing temperature and frequency, respectively. The 1.0 μm-thick thin film annealed at 650 °C for 60 min has a remnant polarization Pr of 13.2 μC/cm² and a coercive field Ec of 55.5 kV/cm, the dielectric constant decreases from 950 to 500 as frequency increases from 10 Hz to 1000 kHz. The dielectric constant has the lowest value when the frequency is 20 kHz. The 0.47 μm-thick thin film annealed at 600 °C for 60 min has a remnant polarization Pr of 16.3 μC/cm² and a coercive fields Ec of 117.6 kV/cm. © 1996 IEEE

Original language	English
Title of host publication	ISAF '96 - Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics
Publisher	IEEE
Pages	451-454
Volume	1
ISBN (Electronic)	0-7803-3355-1
DOIs	https://doi.org/10.1109/ISAF.1996.602786
Publication status	Published - Aug 1996
Event	10th IEEE International Symposium on Applications of Ferroelectrics (ISAF '96) - East Brunswick, United States Duration: 18 Aug 1996 → 21 Aug 1996

Conference

Conference	10th IEEE International Symposium on Applications of Ferroelectrics (ISAF '96)
Place	United States
City	East Brunswick
Period	18/08/96 → 21/08/96

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@inproceedings{9b6fb7a0b3004ddb9625f0af0f1f5db0,

title = "PZT thin film preparation on Pt/Ti electrode by RF magnetron sputtering",

abstract = "We have investigated the structural and electrical properties of lead-zirconate-titanate (PZT) thin films prepared on Pt/Ti/Si substrates by rf magnetron sputtering. The as-deposited 1.0 μm-thick thin films were completely crystallized into the perovskite phase at 500 °C for 60 min in oxygen. The structure and the lattice parameter, the dielectric loss and the dielectric constant have been examined as a function of annealing temperature and frequency, respectively. The 1.0 μm-thick thin film annealed at 650 °C for 60 min has a remnant polarization Pr of 13.2 μC/cm2 and a coercive field Ec of 55.5 kV/cm, the dielectric constant decreases from 950 to 500 as frequency increases from 10 Hz to 1000 kHz. The dielectric constant has the lowest value when the frequency is 20 kHz. The 0.47 μm-thick thin film annealed at 600 °C for 60 min has a remnant polarization Pr of 16.3 μC/cm2 and a coercive fields Ec of 117.6 kV/cm. {\textcopyright} 1996 IEEE",

author = "Lu, \{D. X.\} and Pun, \{E. Y. B.\} and Zhang, \{Y. L.\} and Wong, \{E. M. W.\} and Chung, \{P. S.\} and Huang, \{L. B.\} and Lee, \{Z. Y.\}",

year = "1996",

month = aug,

doi = "10.1109/ISAF.1996.602786",

language = "English",

volume = "1",

pages = "451--454",

booktitle = "ISAF '96 - Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics",

publisher = "IEEE",

address = "United States",

note = "10th IEEE International Symposium on Applications of Ferroelectrics (ISAF '96) ; Conference date: 18-08-1996 Through 21-08-1996",

}

Lu, DX, Pun, EYB, Zhang, YL, Wong, EMW, Chung, PS, Huang, LB & Lee, ZY 1996, PZT thin film preparation on Pt/Ti electrode by RF magnetron sputtering. in ISAF '96 - Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics. vol. 1, IEEE, pp. 451-454, 10th IEEE International Symposium on Applications of Ferroelectrics (ISAF '96), East Brunswick, United States, 18/08/96. https://doi.org/10.1109/ISAF.1996.602786

PZT thin film preparation on Pt/Ti electrode by RF magnetron sputtering. / Lu, D. X.; Pun, E. Y. B.; Zhang, Y. L. et al.
ISAF '96 - Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics. Vol. 1 IEEE, 1996. p. 451-454.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - PZT thin film preparation on Pt/Ti electrode by RF magnetron sputtering

AU - Lu, D. X.

AU - Pun, E. Y. B.

AU - Zhang, Y. L.

AU - Wong, E. M. W.

AU - Chung, P. S.

AU - Huang, L. B.

AU - Lee, Z. Y.

PY - 1996/8

Y1 - 1996/8

N2 - We have investigated the structural and electrical properties of lead-zirconate-titanate (PZT) thin films prepared on Pt/Ti/Si substrates by rf magnetron sputtering. The as-deposited 1.0 μm-thick thin films were completely crystallized into the perovskite phase at 500 °C for 60 min in oxygen. The structure and the lattice parameter, the dielectric loss and the dielectric constant have been examined as a function of annealing temperature and frequency, respectively. The 1.0 μm-thick thin film annealed at 650 °C for 60 min has a remnant polarization Pr of 13.2 μC/cm2 and a coercive field Ec of 55.5 kV/cm, the dielectric constant decreases from 950 to 500 as frequency increases from 10 Hz to 1000 kHz. The dielectric constant has the lowest value when the frequency is 20 kHz. The 0.47 μm-thick thin film annealed at 600 °C for 60 min has a remnant polarization Pr of 16.3 μC/cm2 and a coercive fields Ec of 117.6 kV/cm. © 1996 IEEE

AB - We have investigated the structural and electrical properties of lead-zirconate-titanate (PZT) thin films prepared on Pt/Ti/Si substrates by rf magnetron sputtering. The as-deposited 1.0 μm-thick thin films were completely crystallized into the perovskite phase at 500 °C for 60 min in oxygen. The structure and the lattice parameter, the dielectric loss and the dielectric constant have been examined as a function of annealing temperature and frequency, respectively. The 1.0 μm-thick thin film annealed at 650 °C for 60 min has a remnant polarization Pr of 13.2 μC/cm2 and a coercive field Ec of 55.5 kV/cm, the dielectric constant decreases from 950 to 500 as frequency increases from 10 Hz to 1000 kHz. The dielectric constant has the lowest value when the frequency is 20 kHz. The 0.47 μm-thick thin film annealed at 600 °C for 60 min has a remnant polarization Pr of 16.3 μC/cm2 and a coercive fields Ec of 117.6 kV/cm. © 1996 IEEE

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U2 - 10.1109/ISAF.1996.602786

DO - 10.1109/ISAF.1996.602786

M3 - RGC 32 - Refereed conference paper (with host publication)

VL - 1

SP - 451

EP - 454

BT - ISAF '96 - Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics

PB - IEEE

T2 - 10th IEEE International Symposium on Applications of Ferroelectrics (ISAF '96)

Y2 - 18 August 1996 through 21 August 1996

ER -

PZT thin film preparation on Pt/Ti electrode by RF magnetron sputtering

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