Pyramidal structural defects in erbium silicide thin films

Eu Jin Tan; Mathieu Bouville; Dong Zhi Chi; Kin Leong Pey; Pooi See Lee; David J. Srolovitz; Chih Hang Tung

doi:10.1063/1.2162862

Pyramidal structural defects in erbium silicide thin films

Eu Jin Tan
, Mathieu Bouville
, Dong Zhi Chi^*
, Kin Leong Pey
, Pooi See Lee
, David J. Srolovitz
, Chih Hang Tung

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

20 Citations (Scopus)

Abstract

Pyramidal structural defects, 5-8 μm wide, have been discovered in thin films of epitaxial ErSi_2-x formed by annealing thin Er films on Si(001) substrates at temperatures of 500-800 °C. The formation of these defects is not due to oxidation. We propose that they form as a result of the separation of the silicide film from the substrate and its buckling in order to relieve the compressive, biaxial epitaxial stresses. Silicon can then diffuse through the silicide or along the interface to fully or partially fill the void between the buckled erbium disilicide film and the substrate.

Original language	English
Article number	021908
Pages (from-to)	1-3
Journal	Applied Physics Letters
Volume	88
Issue number	2
Online published	Jan 2006
DOIs	https://doi.org/10.1063/1.2162862
Publication status	Published - 9 Jan 2006
Externally published	Yes

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title = "Pyramidal structural defects in erbium silicide thin films",

abstract = "Pyramidal structural defects, 5-8 μm wide, have been discovered in thin films of epitaxial ErSi2-x formed by annealing thin Er films on Si(001) substrates at temperatures of 500-800 °C. The formation of these defects is not due to oxidation. We propose that they form as a result of the separation of the silicide film from the substrate and its buckling in order to relieve the compressive, biaxial epitaxial stresses. Silicon can then diffuse through the silicide or along the interface to fully or partially fill the void between the buckled erbium disilicide film and the substrate.",

author = "Tan, \{Eu Jin\} and Mathieu Bouville and Chi, \{Dong Zhi\} and Pey, \{Kin Leong\} and Lee, \{Pooi See\} and Srolovitz, \{David J.\} and Tung, \{Chih Hang\}",

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T1 - Pyramidal structural defects in erbium silicide thin films

AU - Tan, Eu Jin

AU - Bouville, Mathieu

AU - Chi, Dong Zhi

AU - Pey, Kin Leong

AU - Lee, Pooi See

AU - Srolovitz, David J.

AU - Tung, Chih Hang

PY - 2006/1/9

Y1 - 2006/1/9

N2 - Pyramidal structural defects, 5-8 μm wide, have been discovered in thin films of epitaxial ErSi2-x formed by annealing thin Er films on Si(001) substrates at temperatures of 500-800 °C. The formation of these defects is not due to oxidation. We propose that they form as a result of the separation of the silicide film from the substrate and its buckling in order to relieve the compressive, biaxial epitaxial stresses. Silicon can then diffuse through the silicide or along the interface to fully or partially fill the void between the buckled erbium disilicide film and the substrate.

AB - Pyramidal structural defects, 5-8 μm wide, have been discovered in thin films of epitaxial ErSi2-x formed by annealing thin Er films on Si(001) substrates at temperatures of 500-800 °C. The formation of these defects is not due to oxidation. We propose that they form as a result of the separation of the silicide film from the substrate and its buckling in order to relieve the compressive, biaxial epitaxial stresses. Silicon can then diffuse through the silicide or along the interface to fully or partially fill the void between the buckled erbium disilicide film and the substrate.

UR - https://www.scopus.com/pages/publications/30744464082

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U2 - 10.1063/1.2162862

DO - 10.1063/1.2162862

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 88

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 021908

ER -

Pyramidal structural defects in erbium silicide thin films

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