Pure valley current generation in graphene nanostructure
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
Original language | English |
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Article number | 126990 |
Journal / Publication | Physics Letters, Section A: General, Atomic and Solid State Physics |
Volume | 386 |
Online published | 1 Nov 2020 |
Publication status | Published - 18 Jan 2021 |
Link(s)
Abstract
We proposed a new method to generate pure valley current in a three-terminal graphene junction using intrinsic asymmetry in graphene nanostructures. The three-terminal junction consists of one zigzag lead and two armchair leads. We found that a pure valley current can be obtained in the zigzag lead by applying a positive bias to one of the armchair leads and a negative bias to the other armchair lead. Our theoretical results provide us with deeper understanding of the generation mechanism of pure valley current and may stimulate further experimental studies of pure valley current in graphene and graphene-like materials.
Research Area(s)
- Graphene, Nanojunctions, Nanostructures, Pure valley current, Quantum transport, Valleytronics
Citation Format(s)
Pure valley current generation in graphene nanostructure. / Zhang, Qingtian; Chan, Kwok Sum.
In: Physics Letters, Section A: General, Atomic and Solid State Physics, Vol. 386, 126990, 18.01.2021.
In: Physics Letters, Section A: General, Atomic and Solid State Physics, Vol. 386, 126990, 18.01.2021.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review