Abstract
Spin current generators are critical components for spintronics-based information processing. In this work, we theoretically and computationally investigate the bulk spin photovoltaic (BSPV) effect for creating DC spin current under light illumination. The only requirement for BSPV is inversion symmetry breaking, thus it applies to a broad range of materials and can be readily integrated with existing semiconductor technologies. The BSPV effect is a cousin of the bulk photovoltaic (BPV) effect, whereby a DC charge current is generated under light. Thanks to the different selection rules on spin and charge currents, a pure spin current can be realized if the system possesses mirror symmetry or inversion-mirror symmetry. The mechanism of BSPV and the role of the electronic relaxation time τ are also elucidated. We apply our theory to several distinct materials, including monolayer transition metal dichalcogenides, anti-ferromagnetic bilayer MnBi2Te4, and the surface of topological crystalline insulator cubic SnTe. © 2021, The Author(s).
| Original language | English |
|---|---|
| Article number | 4330 |
| Number of pages | 9 |
| Journal | Nature Communications |
| Volume | 12 |
| Online published | 15 Jul 2021 |
| DOIs | |
| Publication status | Published - 2021 |
| Externally published | Yes |
Funding
This work was supported by an Office of Naval Research MURI through grant #N00014-17-1-2661. We are grateful for the insightful suggestions by Dr. Zhurun Ji.
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Publisher's Copyright Statement
- This full text is made available under CC-BY 4.0. https://creativecommons.org/licenses/by/4.0/
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