Pulsed excimer laser processing of AlN/GaN thin films

W. S. Wong; L. F. Schloss; G. S. Sudhir; B. P. Linder; K. M. Yu; E. R. Weber; T. Sands; N. W. Cheung

doi:10.1557/proc-449-1011

Pulsed excimer laser processing of AlN/GaN thin films

W. S. Wong, L. F. Schloss, G. S. Sudhir, B. P. Linder, K. M. Yu, E. R. Weber, T. Sands, N. W. Cheung

Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal

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Abstract

A KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AlN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AlN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsed laser annealing at an energy density of 2000 mJ/cm². Rutherford backscattering spectrometry of a Mg-implanted AlN (75 nm thick)/GaN (1.0 μm thick) thin-film heterostructure showed a 20% reduction of the ⁴He⁺ backscattering yield after laser annealing at an energy density of 400 mJ/cm². CL measurements revealed a 410 nm emission peak indicating the incorporation of Mg after laser processing.

Original language	English
Pages (from-to)	1011-1016
Journal	Materials Research Society Symposium - Proceedings
Volume	449
DOIs	https://doi.org/10.1557/proc-449-1011
Publication status	Published - 1997
Externally published	Yes
Event	Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: 3 Dec 1996 → 5 Dec 1996

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@article{c93b2a414a2049cc8c1c5432e98a4dc1,

title = "Pulsed excimer laser processing of AlN/GaN thin films",

abstract = "A KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AlN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AlN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsed laser annealing at an energy density of 2000 mJ/cm2. Rutherford backscattering spectrometry of a Mg-implanted AlN (75 nm thick)/GaN (1.0 μm thick) thin-film heterostructure showed a 20% reduction of the 4He+ backscattering yield after laser annealing at an energy density of 400 mJ/cm2. CL measurements revealed a 410 nm emission peak indicating the incorporation of Mg after laser processing.",

author = "Wong, {W. S.} and Schloss, {L. F.} and Sudhir, {G. S.} and Linder, {B. P.} and Yu, {K. M.} and Weber, {E. R.} and T. Sands and Cheung, {N. W.}",

year = "1997",

doi = "10.1557/proc-449-1011",

language = "English",

volume = "449",

pages = "1011--1016",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Symposium ; Conference date: 03-12-1996 Through 05-12-1996",

}

TY - JOUR

T1 - Pulsed excimer laser processing of AlN/GaN thin films

AU - Wong, W. S.

AU - Schloss, L. F.

AU - Sudhir, G. S.

AU - Linder, B. P.

AU - Yu, K. M.

AU - Weber, E. R.

AU - Sands, T.

AU - Cheung, N. W.

PY - 1997

Y1 - 1997

N2 - A KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AlN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AlN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsed laser annealing at an energy density of 2000 mJ/cm2. Rutherford backscattering spectrometry of a Mg-implanted AlN (75 nm thick)/GaN (1.0 μm thick) thin-film heterostructure showed a 20% reduction of the 4He+ backscattering yield after laser annealing at an energy density of 400 mJ/cm2. CL measurements revealed a 410 nm emission peak indicating the incorporation of Mg after laser processing.

AB - A KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AlN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AlN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsed laser annealing at an energy density of 2000 mJ/cm2. Rutherford backscattering spectrometry of a Mg-implanted AlN (75 nm thick)/GaN (1.0 μm thick) thin-film heterostructure showed a 20% reduction of the 4He+ backscattering yield after laser annealing at an energy density of 400 mJ/cm2. CL measurements revealed a 410 nm emission peak indicating the incorporation of Mg after laser processing.

UR - http://www.scopus.com/inward/record.url?scp=0030651198&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0030651198&origin=recordpage

U2 - 10.1557/proc-449-1011

DO - 10.1557/proc-449-1011

M3 - RGC 22 - Publication in policy or professional journal

SN - 0272-9172

VL - 449

SP - 1011

EP - 1016

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Symposium

Y2 - 3 December 1996 through 5 December 1996

ER -

Pulsed excimer laser processing of AlN/GaN thin films

Abstract

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