Exploration of the growth parameter space for MBE-grown GaN1-xSbx highly mismatched alloys

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • W. L. Sarney
  • S. P. Svensson
  • S. V. Novikov
  • W. Walukiewicz
  • M. Ting
  • C. T. Foxon

Detail(s)

Original languageEnglish
Pages (from-to)255-257
Journal / PublicationJournal of Crystal Growth
Volume425
Online published21 Feb 2015
Publication statusPublished - 1 Sept 2015

Abstract

Highly mismatched GaN1-xSbx alloys were grown under N-rich conditions at low substrate temperatures (325-550 °C) at a growth rates of ~0.09 μm/hr on sapphire. The alloys ranged in Sb composition from 0% to 16%, with the bandgap shifting from 3.3 to 1.6 eV in accordance with the band anticrossing (BAC) model. We compare these results to growths from another chamber, having a different N source, and using a faster growth rate (~0.24 μm/hr), much lower substrate temperatures (as low as 80 °C), different III/V ratios and absolute fluxes. Despite the range of morphologies obtained, all alloys follow the predictions of the BAC model with the bandgap only depending on the Sb composition. Published by Elsevier B.V.

Research Area(s)

  • A1. Crystal structure, A3. Molecular beam epitaxy, B1. Nitrides, B2. Semiconducting III-V materials

Citation Format(s)

Exploration of the growth parameter space for MBE-grown GaN1-xSbx highly mismatched alloys. / Sarney, W. L.; Svensson, S. P.; Novikov, S. V. et al.
In: Journal of Crystal Growth, Vol. 425, 01.09.2015, p. 255-257.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review