Exploration of the growth parameter space for MBE-grown GaN1-xSbx highly mismatched alloys
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
---|---|
Pages (from-to) | 255-257 |
Journal / Publication | Journal of Crystal Growth |
Volume | 425 |
Online published | 21 Feb 2015 |
Publication status | Published - 1 Sept 2015 |
Link(s)
DOI | DOI |
---|---|
Document Link | |
Link to Scopus | https://www.scopus.com/record/display.uri?eid=2-s2.0-84979961198&origin=recordpage |
Permanent Link | https://scholars.cityu.edu.hk/en/publications/publication(f9f9dfb6-ff9d-414d-bd61-f2fbb7a4f439).html |
Abstract
Highly mismatched GaN1-xSbx alloys were grown under N-rich conditions at low substrate temperatures (325-550 °C) at a growth rates of ~0.09 μm/hr on sapphire. The alloys ranged in Sb composition from 0% to 16%, with the bandgap shifting from 3.3 to 1.6 eV in accordance with the band anticrossing (BAC) model. We compare these results to growths from another chamber, having a different N source, and using a faster growth rate (~0.24 μm/hr), much lower substrate temperatures (as low as 80 °C), different III/V ratios and absolute fluxes. Despite the range of morphologies obtained, all alloys follow the predictions of the BAC model with the bandgap only depending on the Sb composition. Published by Elsevier B.V.
Research Area(s)
- A1. Crystal structure, A3. Molecular beam epitaxy, B1. Nitrides, B2. Semiconducting III-V materials
Citation Format(s)
Exploration of the growth parameter space for MBE-grown GaN1-xSbx highly mismatched alloys. / Sarney, W. L.; Svensson, S. P.; Novikov, S. V. et al.
In: Journal of Crystal Growth, Vol. 425, 01.09.2015, p. 255-257.
In: Journal of Crystal Growth, Vol. 425, 01.09.2015, p. 255-257.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review