Nondeterministic Random Bits Extraction from Injected Chaotic Semiconductor Lasers

Research output: Conference Papers (RGC: 31A, 31B, 32, 33)31A_Invited conference paper (refereed items)peer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages471-474
Publication statusPublished - Nov 2016

Conference

TitleInternational Symposium on Nonlinear Theory and Its Applications 2016
Location
PlaceJapan
CityYugawara
Period27 - 30 November 2016

Abstract

Randomness extraction from an optically injected semiconductor laser is investigated. The generation of randomness from the chaotic intensity time series is examined by estimating the time-dependent exponents through state-space reconstruction. Chaotic dynamics enables fast divergence of neighboring states
with positive exponents, while the possible effects of negative exponents have to be ruled out by using a sufficiently long sampling interval. This guarantees successful extraction of nondeterministic random bits at 200 Gbps from experimentally injected chaotic lasers.

Citation Format(s)

Nondeterministic Random Bits Extraction from Injected Chaotic Semiconductor Lasers. / LI, Xiaozhou; ZHUANG, Junping; LI, Songsui; CHAN, Sze Chun.

2016. 471-474 International Symposium on Nonlinear Theory and Its Applications 2016, Yugawara, Japan.

Research output: Conference Papers (RGC: 31A, 31B, 32, 33)31A_Invited conference paper (refereed items)peer-review