NiSi formation at the silicide/Si interface on the NiPt/Si system
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 4903-4906 |
| Journal / Publication | Journal of Applied Physics |
| Volume | 53 |
| Issue number | 7 |
| Publication status | Published - 1982 |
| Externally published | Yes |
Link(s)
Abstract
Alloy films of NiPt were e-beam codeposited on n-type Si and annealed up to 700°C in a purified- He ambient furnace. Silicide formation was monitored using MeV4 He Rutherford backscattering and glancing-angle x-ray diffraction. At low temperatures (300-350°C), Ni segregates at the Si/ silicide interface and the first phases detected are NiSi and PtSi. At intermediate temperatures (400-500°C), there is further accumulation of Ni at the Si/silicide interface, and at later stages an incursion of Pt to the interface. The barrier height increase reflects the presence of Pt. At 700°C, the Ni and Pt redistribute to form a uniform ternary.
Bibliographic Note
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Citation Format(s)
NiSi formation at the silicide/Si interface on the NiPt/Si system. / Ottaviani, G.; Tu, K. N.; Chu, W. K. et al.
In: Journal of Applied Physics, Vol. 53, No. 7, 1982, p. 4903-4906.
In: Journal of Applied Physics, Vol. 53, No. 7, 1982, p. 4903-4906.
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
