HRTEM study of atomic faceting interfaces of Σ=3 NiSi2/Si on (011)Si substrate
|Journal / Publication||Materials Science Forum|
|Online published||Jul 1995|
|Publication status||Published - 1995|
|Title||2nd International Conference on the Role of Interfaces in Advanced Materials Design, Processing and Performance|
|Period||1 - 5 November 1993|
|Link to Scopus||https://www.scopus.com/record/display.uri?eid=2-s2.0-0029178663&origin=recordpage|
The NiSi2 thin film grown on the (11̄0) Si substrate was examined and the Σ=3 NiSi2(1̄11̄)/(1̄11) and NiSi2(11̄5)/(1̄11) Si microfacets were found. The chain unit model was examined in the NiSi2(11̄5)/(1̄11) Si interface and compared with the NiSi2(1̄11)/(11̄5) Si interface in the previous case. Two different domain related atomic faceting structures of the NiSi2(11̄5)/(1̄11) Si interface were found. Finally, the indications of these results were discussed.
Materials Science Forum, Vol. 189-190, 1995, p. 135-142.
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal
Chen, WJ & Chen, FR 1995, 'HRTEM study of atomic faceting interfaces of Σ=3 NiSi2/Si on (011)Si substrate', Materials Science Forum, vol. 189-190, pp. 135-142. https://doi.org/10.4028/www.scientific.net/msf.189-190.135