Porous silicon organic vapor and humidity sensor

M. C. Poon; J. K O Sin; H. Wong; P. G. Han; W. H. Kwok; Y. C. Bow

doi:10.1557/proc-459-183

Porous silicon organic vapor and humidity sensor

Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal

Overview

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Author(s)

M. C. Poon
J. K O Sin
P. G. Han
W. H. Kwok
Y. C. Bow

Detail(s)

Original language	English
Pages (from-to)	183-188
Journal / Publication	Materials Research Society Symposium - Proceedings
Volume	459
Publication status	Published - 1997
Externally published	Yes

Conference

Title	Proceedings of the 1996 MRS Fall Symposium
City	Boston, MA, USA
Period	3 - 5 December 1996

Link(s)

DOI	DOI https://doi.org/10.1557/proc-459-183 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0030708199&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(f332691d-93ae-4d8a-9d1f-1bdbe976a4bd).html

Abstract

This paper presents new organic vapor sensitive device using anodized porous silicon (PS). The sensor has aluminum (Al)/PS/p-Si/Al Schottky diode structure and sensitivity at room temperature in 2600 ppm acetone, methanol, 2-propanol and ethanol is about 4, 5, 10 and 40 times respectively. The sensitivity in 800-2600 ppm ethanol vapor is 2 to 40 times. The diode sensor can be converted into an Al/PS/Al resistor sensor by switching the electrical contacts, and the sensitivity is about 500 times for a humidity change of 43-75%. All sensors have response time of about 0.5 min. The sensitivity is stable with time and the PS sensor can be integrated into VLSI Si devices to form novel microelectronic systems.