Enhanced dopant activation and elimination of end-of-range defects in BF2+-implanted silicon-on-insulator by high-density current

H. H. Lin; S. L. Cheng; L. J. Chen; Chih Chen; K. N. Tu

doi:10.1063/1.1423773

Author(s)

H. H. Lin
S. L. Cheng
L. J. Chen
Chih Chen
K. N. Tu

Detail(s)

Original language	English
Pages (from-to)	3971-3973
Journal / Publication	Applied Physics Letters
Volume	79
Issue number	24
Publication status	Published - 10 Dec 2001
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.1423773 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0035842816&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(ef76e82c-2d63-480d-8333-6cdb69ea1964).html

Abstract

Enhanced dopant activation and elimination of end-of-range (EOR) defects in BF₂⁺-implanted silicon-on-insulator (SOI) have been achieved by high-density current stressing. With the high-density current stressing, the implantation amorphous silicon underwent recrystallization, enhanced dopant activation and elimination of the (EOR) defects. The current stressing method allows the complete removal of EOR defects that has not been possible with conventional thermal annealing in the processing of high-performance SOI devices. © 2001 American Institute of Physics.

Bibliographic Note

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Citation Format(s)

[ RIS ] [ BibTeX ]

Enhanced dopant activation and elimination of end-of-range defects in BF₂⁺-implanted silicon-on-insulator by high-density current. / Lin, H. H.; Cheng, S. L.; Chen, L. J. et al.

In: Applied Physics Letters, Vol. 79, No. 24, 10.12.2001, p. 3971-3973.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Lin, HH, Cheng, SL, Chen, LJ, Chen, C & Tu, KN 2001, 'Enhanced dopant activation and elimination of end-of-range defects in BF₂⁺-implanted silicon-on-insulator by high-density current', Applied Physics Letters, vol. 79, no. 24, pp. 3971-3973. https://doi.org/10.1063/1.1423773

Lin, H. H., Cheng, S. L., Chen, L. J., Chen, C., & Tu, K. N. (2001). Enhanced dopant activation and elimination of end-of-range defects in BF₂⁺-implanted silicon-on-insulator by high-density current. Applied Physics Letters, 79(24), 3971-3973. https://doi.org/10.1063/1.1423773

Lin HH, Cheng SL, Chen LJ, Chen C, Tu KN. Enhanced dopant activation and elimination of end-of-range defects in BF₂⁺-implanted silicon-on-insulator by high-density current. Applied Physics Letters. 2001 Dec 10;79(24):3971-3973. doi: 10.1063/1.1423773

Lin, H. H. ; Cheng, S. L. ; Chen, L. J. et al. / Enhanced dopant activation and elimination of end-of-range defects in BF₂⁺-implanted silicon-on-insulator by high-density current. In: Applied Physics Letters. 2001 ; Vol. 79, No. 24. pp. 3971-3973.