Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements

M. C. Ridgway; C. J. Glover; G. J. Foran; K. M. Yu

doi:10.1016/S0168-583X(98)00588-6

Author(s)

M. C. Ridgway
C. J. Glover
G. J. Foran
K. M. Yu

Detail(s)

Original language	English
Pages (from-to)	148-154
Journal / Publication	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	147
Issue number	1-4
Publication status	Published - 1 Jan 1999
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1016/S0168-583X(98)00588-6 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0032755220&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(ebef78bb-9f31-4f08-80be-86250f7c936c).html

Abstract

Extended X-ray absorption fine structure (EXAFS) analysis has been used to determine the structural parameters of stoichiometric, amorphised GaAs. Relative to a crystalline sample, the nearest-neighbor bond length and Debye-Waller factor both increased for amorphous material. In contrast, the coordination numbers about both Ga and As atoms in the amorphous phase decreased to ∼3.85 atoms from the crystalline value of four. Similar trends were evident for amorphised Ge excluding the coordination number which did not deviate from the crystalline value. The structural parameters of amorphised GaAs and Ge have been discussed in terms of the multi- and mono-elemental nature, respectively, of the two materials. ©1999 Elsevier Science B.V. All rights reserved.

Research Area(s)

Amorphous GaAs, EXAFS, Extended X-ray absorption fine structure, GaAs, Ion implantation

Citation Format(s)

[ RIS ] [ BibTeX ]

Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements. / Ridgway, M. C.; Glover, C. J.; Foran, G. J. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 147, No. 1-4, 01.01.1999, p. 148-154.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Ridgway, MC, Glover, CJ, Foran, GJ & Yu, KM 1999, 'Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 147, no. 1-4, pp. 148-154. https://doi.org/10.1016/S0168-583X(98)00588-6

Ridgway, M. C., Glover, C. J., Foran, G. J., & Yu, K. M. (1999). Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 147(1-4), 148-154. https://doi.org/10.1016/S0168-583X(98)00588-6

Ridgway MC, Glover CJ, Foran GJ, Yu KM. Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 1999 Jan 1;147(1-4):148-154. doi: 10.1016/S0168-583X(98)00588-6

Ridgway, M. C. ; Glover, C. J. ; Foran, G. J. et al. / Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 1999 ; Vol. 147, No. 1-4. pp. 148-154.