Nucleation and growth of Si nanowires from silicon oxide
Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal
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Original language | English |
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Journal / Publication | Physical Review B - Condensed Matter and Materials Physics |
Volume | 58 |
Issue number | 24 |
Publication status | Published - 15 Dec 1998 |
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DOI | DOI |
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Link to Scopus | https://www.scopus.com/record/display.uri?eid=2-s2.0-0000257890&origin=recordpage |
Permanent Link | https://scholars.cityu.edu.hk/en/publications/publication(eb43ee93-1244-407a-849b-44d0b9b1326a).html |
Abstract
Nucleation and growth of Si nanowires by laser ablation and thermal evaporation of Si powder sources mixed with SiO2 have been investigated by means of transmission electron microscopy. At the initial nucleation stage, Si oxide vapor condensed on the substrate and formed Si nanoparticles (the nuclei of nanowires). Each Si nanowire nucleus consisted of a polycrystalline Si core containing a high density of defects and a Si oxide shell. A growth mechanism was proposed based on the microstructure and different morphologies of the Si nanowires observed.
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Nucleation and growth of Si nanowires from silicon oxide. / Wang, N.; Tang, Y. H.; Zhang, Y. F. et al.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 58, No. 24, 15.12.1998.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 58, No. 24, 15.12.1998.
Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal
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