Substitutionality of nitrogen atoms and formation of nitrogen complexes and point defects in GaPN alloys
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Article number | 75106 |
Journal / Publication | Journal of Physics D: Applied Physics |
Volume | 47 |
Issue number | 7 |
Publication status | Published - 19 Feb 2014 |
Externally published | Yes |
Link(s)
Abstract
Nitrogen substitution and formation of point defects in GaP (1-x)Nx layers (x ranging from 0.01 to 0.04) grown on GaP substrates are characterized by channelling Rutherford backscattering, nuclear reaction analysis and positron annihilation spectroscopy measurements. It is observed that the substitutionality of nitrogen into GaP decreases from a value of 0.91 to that of
Research Area(s)
- GaPN, nuclear reaction analysis, positron annihilation spectroscopy, Rutherford backscattering
Citation Format(s)
Substitutionality of nitrogen atoms and formation of nitrogen complexes and point defects in GaPN alloys. / Jussila, H.; Yu, K. M.; Kujala, J. et al.
In: Journal of Physics D: Applied Physics, Vol. 47, No. 7, 75106, 19.02.2014.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review