On the degradation mechanisms of quantum-dot light-emitting diodes

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

4 Scopus Citations
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Author(s)

  • Song Chen
  • Weiran Cao
  • Yixing Yang
  • Xiaolin Yan
  • Lei Qian

Detail(s)

Original languageEnglish
Article number765
Journal / PublicationNature Communications
Volume10
Early online date15 Feb 2019
Publication statusPublished - 2019

Link(s)

Abstract

The operating lifetime of blue quantum-dot light-emitting diodes (QLED) is currently a short slab for this emerging display technology. To pinpoint the origin of device degradation, here we apply multiple techniques to monitor the electric-field distribution and space-charge accumulation across the multilayered structure before and after lifetime tests. Evident by charge-modulated electro-absorption and capacitance-voltage characteristics, the excited electrons in blue quantum dots (QD) are prone to cross the type II junction between the QD emission layer and the electron-transporting layer (ETL) due to the offset of conduction band minimum, leading to space-charge accumulation and operating-voltage rise in the ETL. Therefore, unlike those very stable red devices, of which the lifetime is primarily limited by the slow degradation of hole-transporting layer, the poor lifetime of blue QLED originates from the fast degradation at the QD-ETL junction. Materials engineering for efficient electron injection is prerequisite for the boost of operating lifetime.

Research Area(s)

  • HIGH-EFFICIENCY, HOLE INJECTION, CHARGE, NANOCRYSTALS, CDSE, BLINKING, DEVICES, ELECTRON, METAL, OXIDE

Citation Format(s)

On the degradation mechanisms of quantum-dot light-emitting diodes. / Chen, Song; Cao, Weiran; Liu, Taili; Tsang, Sai-Wing; Yang, Yixing; Yan, Xiaolin; Qian, Lei.

In: Nature Communications, Vol. 10, 765, 2019.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

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