Annealing-induced changes in the nanoscale electrical homogeneity of bismuth ferrite dielectric thin films
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 2391-2396 |
| Journal / Publication | Ceramics International |
| Volume | 37 |
| Issue number | 7 |
| Publication status | Published - Sep 2011 |
| Externally published | Yes |
Link(s)
Abstract
In this study, we investigated the effects of forming gas (7% H2 + 93% Ar) annealing (FGA) and recovery annealing (RA) in ambient oxygen on the structure and electrical properties of BiFeO3 (BFO) thin films. X-ray diffraction results indicate that BFO remains in the perovskite phase following FGA. However, the spatial distribution of current maps obtained by conductive atomic force microscopy shows that FGA-treated BFO thin films are less electrically insulating than those without prepared thermal annealing. Recovery annealing improves the structural and chemical homogeneity of the FGA-treated films, thereby increasing the electrical resistance of the films. © 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
Research Area(s)
- A. Films, B. Defects, B. Surfaces, C. Electrical properties, D. Perovskites
Bibliographic Note
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Citation Format(s)
Annealing-induced changes in the nanoscale electrical homogeneity of bismuth ferrite dielectric thin films. / Liang, Yuan-Chang; Chen, W. S.; Hu, Chia-Yen; Huang, Chiem-Lum; Kai, W.
In: Ceramics International, Vol. 37, No. 7, 09.2011, p. 2391-2396.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
