DIFFUSION BARRIER FOR PtSi/Si STRUCTURES.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 3708-3709 |
| Journal / Publication | IBM technical disclosure bulletin |
| Volume | 27 |
| Issue number | 7 A |
| Publication status | Published - Dec 1984 |
| Externally published | Yes |
Link(s)
Abstract
Platinum silicide forms a high barrier height Schottky barrier diode to silicon, and aluminum is used as a low resistance metallization. During conventional heat treatment (sintering) of the Al/PtSi/Si structure at temperatures around 450 degree C, penetration of Al into PtSi occurs and, after a longer time, Al can penetrate into the interface between PtSi and Si. This reduces the barrier height. In order to overcome this problem, diffusion barriers, such as TiW, CrO//x, or TiN//x, are deposited between the PtSi layer and the Al layer.
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Citation Format(s)
DIFFUSION BARRIER FOR PtSi/Si STRUCTURES. / Eizenberg, M.; Mayer, J. W.; Tu, K. N.
In: IBM technical disclosure bulletin, Vol. 27, No. 7 A, 12.1984, p. 3708-3709.
In: IBM technical disclosure bulletin, Vol. 27, No. 7 A, 12.1984, p. 3708-3709.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
