Microstructures of gallium nitride nanowires synthesized by oxide-assisted method
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
---|---|
Pages (from-to) | 377-380 |
Journal / Publication | Chemical Physics Letters |
Volume | 345 |
Issue number | 5-6 |
Publication status | Published - 21 Sep 2001 |
Externally published | Yes |
Link(s)
Abstract
Gallium nitride (GaN) nanowires were synthesized using the recently developed oxide-assisted method by laser ablating a target of GaN mixed with gallium oxide (Ga2O3). Transmission electron microscopic characterization showed that GaN nanowires were smooth and straight with a core-sheath structure of 80 nm in average diameter and tens of micrometers in length. Both hexagonal and cubic structured GaN nanowires were produced. The growth mechanism was discussed.
Citation Format(s)
Microstructures of gallium nitride nanowires synthesized by oxide-assisted method. / Shi, W. S.; Zheng, Y. F.; Wang, N. et al.
In: Chemical Physics Letters, Vol. 345, No. 5-6, 21.09.2001, p. 377-380.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review