Band anticrossing in group II-Ox-VI1-x highly mismatched alloys : Cd1-xMnyOxTe1-x quaternaries synthesized by O ion implantation
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 1571-1573 |
| Journal / Publication | Applied Physics Letters |
| Volume | 80 |
| Issue number | 9 |
| Publication status | Published - 4 Mar 2002 |
| Externally published | Yes |
Link(s)
Abstract
Highly mismatched group II-Ox-VI1-x alloys have been synthesized by oxygen implantation into Cd1-yMnyTe crystals. In crystals with y>0.02, incorporation of O causes a large decrease in the band gap. The band gap reduction increases with y; the largest value observed is 190 meV in O-implanted Cd0.38Mn0.62Te. This striking behavior is consistent with the band anticrossing model which predicts that repulsive interaction between localized states of O and the extended states of the conduction band causes the band gap reduction. These large, O-induced effects provide a unique opportunity by which to control the optical and electronic properties in II-VI alloys. © 2002 American Institute of Physics.
Citation Format(s)
Band anticrossing in group II-Ox-VI1-x highly mismatched alloys : Cd1-xMnyOxTe1-x quaternaries synthesized by O ion implantation. / Yu, K. M.; Walukiewicz, W.; Wu, J. et al.
In: Applied Physics Letters, Vol. 80, No. 9, 04.03.2002, p. 1571-1573.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
