Enhanced dielectric tunability properties of Ba(ZrxTi1-x)O3 thin films using seed layers on Pt/Ti/SiO2/Si substrates

Jiwei Zhai; Cheng Gao; Xi Yao; Zhengkui Xu; Haydn Chen

doi:10.1016/j.ceramint.2007.10.001

Author(s)

Jiwei Zhai
Cheng Gao
Xi Yao
Zhengkui Xu
Haydn Chen

Detail(s)

Original language	English
Pages (from-to)	905-910
Journal / Publication	Ceramics International
Volume	34
Issue number	4
Publication status	Published - May 2008

Link(s)

DOI	DOI https://doi.org/10.1016/j.ceramint.2007.10.001 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-42649120352&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(dbdedf53-31ec-4cd8-bcfe-70ec62e5a4aa).html

Abstract

The compositionally graded and homogeneous Ba(Zr_xTi_1-x)O₃ (BZT) thin films were fabricated on LaNiO₃ (LNO) buffered Pt/Ti/SiO₂/Si and Pt/Ti/SiO₂/Si substrates by a sol-gel deposition method, respectively. These films crystallized into a single perovskite phase. The BZT thin films deposited on LaNiO₃/Pt/Ti/SiO₂/Si substrates had a highly (1 0 0) preferred orientation and exhibited a preferred (1 1 0) orientation when the thin films were deposited on Pt/Ti/SiO₂/Si substrates. The LNO and Ba(Zr_0.30Ti_0.70) served as seed layer on Pt/Ti/SiO₂/Si substrates and analyze the relationship of seed layer, microstructure and dielectric behavior of the thin films. The compositionally graded thin films from BaTiO₃ to BaZr_0.35Ti_0.65O₃ were fabricated on LNO/Pt/Ti/SiO₂/Si substrates. The tunability behavior of compositionally graded films was analyzed in order to produce optimum effective dielectric properties. The dielectric constant of BaZr_xTi_1-xO₃ compositionally graded thin films showed weak temperature dependence. This kind of thin films has a potential in a fabrication of a temperature stable tunable device. © 2007 Elsevier Ltd and Techna Group S.r.l.

Research Area(s)

A. Films, A. Sol-gel processes, C. Dielectric properties, Microstructure

Citation Format(s)

[ RIS ] [ BibTeX ]

Enhanced dielectric tunability properties of Ba(Zr_xTi_1-x)O₃ thin films using seed layers on Pt/Ti/SiO₂/Si substrates. / Zhai, Jiwei; Gao, Cheng; Yao, Xi; Xu, Zhengkui; Chen, Haydn.

In: Ceramics International, Vol. 34, No. 4, 05.2008, p. 905-910.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Zhai, J, Gao, C, Yao, X, Xu, Z & Chen, H 2008, 'Enhanced dielectric tunability properties of Ba(Zr_xTi_1-x)O₃ thin films using seed layers on Pt/Ti/SiO₂/Si substrates', Ceramics International, vol. 34, no. 4, pp. 905-910. https://doi.org/10.1016/j.ceramint.2007.10.001

Zhai, J., Gao, C., Yao, X., Xu, Z., & Chen, H. (2008). Enhanced dielectric tunability properties of Ba(Zr_xTi_1-x)O₃ thin films using seed layers on Pt/Ti/SiO₂/Si substrates. Ceramics International, 34(4), 905-910. https://doi.org/10.1016/j.ceramint.2007.10.001

Zhai J, Gao C, Yao X, Xu Z, Chen H. Enhanced dielectric tunability properties of Ba(Zr_xTi_1-x)O₃ thin films using seed layers on Pt/Ti/SiO₂/Si substrates. Ceramics International. 2008 May;34(4):905-910. https://doi.org/10.1016/j.ceramint.2007.10.001

Zhai, Jiwei ; Gao, Cheng ; Yao, Xi ; Xu, Zhengkui ; Chen, Haydn. / Enhanced dielectric tunability properties of Ba(Zr_xTi_1-x)O₃ thin films using seed layers on Pt/Ti/SiO₂/Si substrates. In: Ceramics International. 2008 ; Vol. 34, No. 4. pp. 905-910.