Plasma-optimized contact for high-performance PdSe2 nanoflake-based field-effect transistors

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

2 Scopus Citations
View graph of relations

Detail(s)

Original languageEnglish
Article number042104
Journal / PublicationApplied Physics Letters
Volume123
Issue number4
Online published24 Jul 2023
Publication statusPublished - 2023

Abstract

Low-resistance contact has long been pursued in the two-dimensional (2D) electronic/optoelectronic device community. Still, an economy-efficient method highly compatible with the conventional 2D device fabrication process in laboratory remains to be explored. Herein, we report a plasma-optimized contact strategy for high-performance PdSe2 nanoflake-based field-effect transistors (FETs). Selenium vacancies created by air plasma can introduce p-type doping in the contact area, thus optimizing the device performance. The effect of plasma treatment on PdSe2 nanoflake is corroborated by high-resolution transmission electron microscopy, energy-dispersive x-ray spectroscopy spectrum, atomic force microscopy, and Kelvin probe force microscopy. The PdSe2 FET with plasma-optimized contact exhibits significantly improved field-effect carrier mobilities, current on/off ratios, and reduced contact resistance than that without plasma treatment fabricated from the same PdSe2 nanoflake. Moreover, this strategy has also been proven effective to prepare high-performance FETs based on 2D WSe2 and MoSe2 nanoflakes, further demonstrating its application prospect. Published under an exclusive license by AIP Publishing

Research Area(s)