Preparation of crystalline carbon nitride films on silicon substrate by chemical vapor deposition

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • H. K. Woo
  • Yafei Zhang
  • S. T. Lee
  • Y. W. Lam
  • K. W. Wong

Detail(s)

Original languageEnglish
Pages (from-to)635-639
Journal / PublicationDiamond and Related Materials
Volume6
Issue number5-7
Publication statusPublished - Apr 1997

Abstract

Polycrystalline carbon nitride films have been deposited on Si(111) substrates by d.c. and r.f. plasma-assisted hot filament chemical vapor deposition using a mixture of NH3, CH4 and H2. For films prepared by both methods, the X-ray diffraction peaks match those of the theoretical β-C3N4 structure, Raman scattering detects no diamond, graphite or amorphous carbon in the films. XPS analysis shows that both films contain mainly C-N, C=N, and C≡N bonding structures. The N to C concentration ratio in the d.c. and r.f. plasma-assisted films is estimated to be 0.36 and 0.16, respectively. © 1997 Elsevier Science S.A.

Research Area(s)

  • Crystalline carbon nitride, d.c./r.f. plasma, Hot filament chemical vapor deposition, Silicon substrate

Citation Format(s)

Preparation of crystalline carbon nitride films on silicon substrate by chemical vapor deposition. / Woo, H. K.; Zhang, Yafei; Lee, S. T. et al.
In: Diamond and Related Materials, Vol. 6, No. 5-7, 04.1997, p. 635-639.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review