Preparation of crystalline carbon nitride films on silicon substrate by chemical vapor deposition
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 635-639 |
Journal / Publication | Diamond and Related Materials |
Volume | 6 |
Issue number | 5-7 |
Publication status | Published - Apr 1997 |
Link(s)
Abstract
Polycrystalline carbon nitride films have been deposited on Si(111) substrates by d.c. and r.f. plasma-assisted hot filament chemical vapor deposition using a mixture of NH3, CH4 and H2. For films prepared by both methods, the X-ray diffraction peaks match those of the theoretical β-C3N4 structure, Raman scattering detects no diamond, graphite or amorphous carbon in the films. XPS analysis shows that both films contain mainly C-N, C=N, and C≡N bonding structures. The N to C concentration ratio in the d.c. and r.f. plasma-assisted films is estimated to be 0.36 and 0.16, respectively. © 1997 Elsevier Science S.A.
Research Area(s)
- Crystalline carbon nitride, d.c./r.f. plasma, Hot filament chemical vapor deposition, Silicon substrate
Citation Format(s)
Preparation of crystalline carbon nitride films on silicon substrate by chemical vapor deposition. / Woo, H. K.; Zhang, Yafei; Lee, S. T. et al.
In: Diamond and Related Materials, Vol. 6, No. 5-7, 04.1997, p. 635-639.
In: Diamond and Related Materials, Vol. 6, No. 5-7, 04.1997, p. 635-639.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review