The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Article number | 6800708 |
| Journal / Publication | IEEE Photonics Journal |
| Volume | 7 |
| Issue number | 2 |
| Online published | 20 Mar 2015 |
| Publication status | Published - Apr 2015 |
| Externally published | Yes |
Link(s)
Abstract
The near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO3 substrates shows abnormal low polarization degree (ρ = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission peaks. In tensile-strained m-plane ZnO, the [0001] polarized state is upper shifted and is overlapping with the [112¯0] polarized state. This phenomenon causes the abnormal low polarization degree and reveals the effect of strain on the emission anisotropy of m-plane ZnO.
Research Area(s)
- II-VI semiconductor materials, Optical films, optical polarization, photoluminescence, strain
Citation Format(s)
The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO. / Wang, H. H.; Tian, J. S.; Chen, C. Y. et al.
In: IEEE Photonics Journal, Vol. 7, No. 2, 6800708, 04.2015.
In: IEEE Photonics Journal, Vol. 7, No. 2, 6800708, 04.2015.
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
