Lorentz Force Magnetic Sensor based on a Thin-Film Piezoelectric-on-Silicon Laterally Vibrating Micromechanical Resonator

S. Ghosh; J. E Y Lee

doi:10.1016/j.proeng.2016.11.239

Lorentz Force Magnetic Sensor based on a Thin-Film Piezoelectric-on-Silicon Laterally Vibrating Micromechanical Resonator

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Overview

3 Scopus Citations

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Detail(s)

Original language	English
Title of host publication	Procedia Engineering
Publisher	Elsevier Ltd
Pages	654-657
Volume	168
Publication status	Published - Sept 2016

Publication series

Name
ISSN (Print)	1877-7058

Conference

Title	30th Eurosensors Conference, Eurosensors 2016
Place	Hungary
City	Budapest
Period	4 - 7 September 2016

Link(s)

DOI	DOI https://doi.org/10.1016/j.proeng.2016.11.239 Final Published version
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Attachment(s)	Documents 14356026.pdf Final Published version, 586 KB, PDF Publisher's Copyright Statement This full text is made available under CC-BY-NC-ND 4.0. https://creativecommons.org/licenses/by-nc-nd/4.0/
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-85009962800&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(c258b83f-cb27-4980-9e99-22e6a0020063).html

Abstract

We present a unique MEMS magnetometer based on a laterally-vibrating Thin-film Piezoelectric-on-Silicon (TPoS) resonator. This is the first time that the piezoelectric effect has been explored for the detection of magnetic fields among CMOS-compatible resonant devices. Strong electromechanical coupling provided by the Aluminium Nitride (AlN) layer, enhances sensitivity to allow operation in air as opposed to vacuum. A Lorentz force in the presence of a magnetic field excites the in-plane vibration mode. No amplifier circuit has been used at the output of the magnetometer. Our proof-of-concept device has been operated at a resonant frequency of 33.27 MHz, and shows a measured sensitivity of 0.42 μA/T despite a sub-optimal quality factor (Q) of 432 in air.

Research Area(s)

lateral vibration mode, microelectromechanical systems (MEMS), micromachined resonant magnetic field sensor, Thin-Film Piezoelectric-on-Silicon (TPoS)