AlN-on-Si MEMS resonator bounded by wide acoustic bandgap two-dimensional phononic crystal anchors
Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45) › 32_Refereed conference paper (with ISBN/ISSN) › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
Original language | English |
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Title of host publication | 2018 IEEE Micro Electro Mechanical Systems (MEMS) |
Publisher | IEEE |
Pages | 727-730 |
ISBN (Electronic) | 978-1-5386-4782-0 |
ISBN (Print) | 9781538647820 |
Publication status | Published - Jan 2018 |
Conference
Title | 31st IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2018) |
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Place | United Kingdom |
City | Belfast |
Period | 21 - 25 January 2018 |
Link(s)
Abstract
We report an AlN-on-Si Lamb wave resonator with a unique wide acoustic bandgap (ABG) phononic crystal (PnC) structure at its anchors that provides an almost 4-fold increase in quality factor (Q). We show that the wider ABG provides for greater suppression of anchor loss and thus higher Q relative to a narrower ABG. Compared to more common circular void PnC structures, the unique PnC structures presented herein based on solid disks offer a 9-fold increase in the ABG size (82MHz vs. 9MHz) at a similar center frequency around 142MHz. The measured improvements in Q over multiple devices are consistent with finite element simulations on tuning the ABG size.
Research Area(s)
- acoustic bandgap, anchor loss, phononic crystals, Piezoelectric-on-silicon resonators, quality factor
Citation Format(s)
AlN-on-Si MEMS resonator bounded by wide acoustic bandgap two-dimensional phononic crystal anchors. / Siddiqi, Muhammad Wajih Ullah; Lee, Joshua E.-Y.
2018 IEEE Micro Electro Mechanical Systems (MEMS). IEEE, 2018. p. 727-730.Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45) › 32_Refereed conference paper (with ISBN/ISSN) › peer-review