AlN-on-Si MEMS resonator bounded by wide acoustic bandgap two-dimensional phononic crystal anchors

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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Detail(s)

Original languageEnglish
Title of host publication2018 IEEE Micro Electro Mechanical Systems (MEMS)
PublisherIEEE
Pages727-730
ISBN (Electronic)978-1-5386-4782-0
ISBN (Print)9781538647820
Publication statusPublished - Jan 2018

Conference

Title31st IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2018)
PlaceUnited Kingdom
CityBelfast
Period21 - 25 January 2018

Abstract

We report an AlN-on-Si Lamb wave resonator with a unique wide acoustic bandgap (ABG) phononic crystal (PnC) structure at its anchors that provides an almost 4-fold increase in quality factor (Q). We show that the wider ABG provides for greater suppression of anchor loss and thus higher Q relative to a narrower ABG. Compared to more common circular void PnC structures, the unique PnC structures presented herein based on solid disks offer a 9-fold increase in the ABG size (82MHz vs. 9MHz) at a similar center frequency around 142MHz. The measured improvements in Q over multiple devices are consistent with finite element simulations on tuning the ABG size.

Research Area(s)

  • acoustic bandgap, anchor loss, phononic crystals, Piezoelectric-on-silicon resonators, quality factor

Citation Format(s)

AlN-on-Si MEMS resonator bounded by wide acoustic bandgap two-dimensional phononic crystal anchors. / Siddiqi, Muhammad Wajih Ullah; Lee, Joshua E.-Y.

2018 IEEE Micro Electro Mechanical Systems (MEMS). IEEE, 2018. p. 727-730.

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review