Etch-hole-assisted energy dispersion for enhancing quality factor in silicon bulk acoustic resonators

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

2 Scopus Citations
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Author(s)

Detail(s)

Original languageEnglish
Title of host publicationProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
PublisherInstitute of Electrical and Electronics Engineers, Inc.
Pages1257-1260
ISBN (print)9781479935086
Publication statusPublished - 2014

Publication series

Name
ISSN (Print)1084-6999

Conference

Title27th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2014
PlaceUnited States
CitySan Francisco, CA
Period26 - 30 January 2014

Abstract

This paper empirically demonstrates how the quality factor (Q) of a width-extensional mode single-crystal silicon bulk-acoustic-resonator (SiBAR) can be enhanced by three times by strategic placement of holes on the structure. The holes serve to disperse the strain energy field concentrated primarily around the nodal lines, ultimately re-distributing strain energy away from the anchors. This in turn reduces anchor loss and thus enhances Q. These results agree well with our finite-element (FE) simulations. We envisage that the concepts reported herein can be extended to even higher performance resonators like piezoelectric aluminum nitride contour mode resonators. © 2014 IEEE.

Citation Format(s)

Etch-hole-assisted energy dispersion for enhancing quality factor in silicon bulk acoustic resonators. / Tu, Cheng; Lee, Joshua E.-Y.
Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS). Institute of Electrical and Electronics Engineers, Inc., 2014. p. 1257-1260 6765877.

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review