Interaction between chromium oxide and chromium silicide
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 258-259 |
Journal / Publication | Journal of Applied Physics |
Volume | 54 |
Issue number | 1 |
Publication status | Published - 1 Jan 1983 |
Externally published | Yes |
Link(s)
Abstract
We have used x-ray induced photoemission spectroscopy and Rutherford backscattering spectroscopy to study the chemical reaction between Cr2O3 and CrSi2. We observed that upon annealing a Cr film on a Si substrate at 550 °C to form CrSi2, the native chromium surface oxide will decompose while a film of SiO2 will form when the CrSi2 growth front reaches the Cr2O3.
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Citation Format(s)
Interaction between chromium oxide and chromium silicide. / Cros, A.; Pollak, R. A.; Tu, K. N.
In: Journal of Applied Physics, Vol. 54, No. 1, 01.01.1983, p. 258-259.
In: Journal of Applied Physics, Vol. 54, No. 1, 01.01.1983, p. 258-259.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review