Sub-Band Gap Turn-On Near-Infrared-to-Visible Up-Conversion Device Enabled by an Organic-Inorganic Hybrid Perovskite Photovoltaic Absorber

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)15920-15925
Journal / PublicationACS Applied Materials and Interfaces
Volume10
Issue number18
Online published17 Apr 2018
Publication statusPublished - 9 May 2018

Abstract

Direct integration of an infrared (IR) photodetector with an organic light-emitting diode (OLED) enables low-cost, pixel-free IR imaging. However, the operation voltage of the resulting IR-to-visible up-conversion is large because of the series device architecture. Here, we report a low-voltage near-IR (NIR)-to-visible up-conversion device using formamidinium lead iodide as a NIR absorber integrated with a phosphorescent OLED. Because of the efficient photocarrier injection from the hybrid perovskite layer to the OLED, we observed a sub-band gap turn-on of the OLED under NIR illumination. The device showed a NIR-to-visible up-conversion efficiency of 3% and a luminance on/off ratio of 103 at only 5 V. Finally, we demonstrate pixel-free NIR imaging using the up-conversion device.

Research Area(s)

  • infrared imaging, organic light-emitting diode, organo-halide perovskite, photovoltaic, up-conversion

Citation Format(s)

Sub-Band Gap Turn-On Near-Infrared-to-Visible Up-Conversion Device Enabled by an Organic-Inorganic Hybrid Perovskite Photovoltaic Absorber. / Yu, By Hyeonggeun; Cheng, Yuanhang; Li, Menglin et al.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 18, 09.05.2018, p. 15920-15925.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review