Abnormal effect of growth interruption on GaSb quantum dots formation grown by molecular beam epitaxy

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • X. D. Luo
  • Z. Y. Xu
  • Y. Q. Wang
  • J. N. Wang
  • W. K. Ge

Detail(s)

Original languageEnglish
Pages (from-to)99-104
Journal / PublicationJournal of Crystal Growth
Volume247
Issue number1-2
Online published19 Nov 2002
Publication statusPublished - Jan 2003
Externally publishedYes

Abstract

The growth interruption (GI) effect on GaSb quantum dot formation grown on GaAs by molecular beam epitaxy was investigated. The structure characterization was performed by reflection high-energy electron diffraction (RHEED), along with photoluminescence measurements. It is found that the GI can significantly change the surface morphology of GaSb QDs. During the GI, the QDs structures can be smoothed out and turned into a 2D-like structure. The time duration of the GI required for the 3D/2D transition depends on the growth time of the GaSb layer. It increases with the increase of the growth time. Our results are explained by a combined effect of the stress relaxation process and surface exchange reactions during the GI. © 2002 Elsevier Science B.V. All rights reserved.

Research Area(s)

  • A1. Growth interruption, A3. Molecular beam epitaxy, A3. Quantum dots, B1. GaSb

Citation Format(s)

Abnormal effect of growth interruption on GaSb quantum dots formation grown by molecular beam epitaxy. / Luo, X. D.; Xu, Z. Y.; Wang, Y. Q. et al.
In: Journal of Crystal Growth, Vol. 247, No. 1-2, 01.2003, p. 99-104.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review